.Measurements o~ the high-frequ~ncy noi:e of a silicon double-injection diode result in (i'l)=a• 4kT ( 1/r) ~if With a= 1.04 and m agreement With the literature. A new interpretation demands Nyquist noise with a 121 in these devices at high frequencies. This is in accord with an equivalent circuit derived for the doubleinjection process. Speculations are made on the general validity of Nyquist noise in nonlinear devices at high frequencies. In addition, generation-recombination noise is suggested as the prime source of the lowfrequency noise..
We measured the noise spectrum between 10 kHz and 10 MHz. In the region where I ∝ V2, we found a noise suppression factor of 1/2 for the white noise, i.e., I2 = (1/2)4kT(∂V/∂I)−1Δf.
Experimental results are reported on the Fourier spectra of generation-recombination (g-r) noise of Ge single crystals, using a reversible technique to vary the noise parameters. Namely, a comparison is made with the noise before irradiation, after irradiation with 14.7-MeV neutrons, and after annealing. Reasonable agreement was obtained with the theory based on a three-level recombination with a single (Shockley-Read) level in the forbidden band.
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