Noise and Equivalent Circuit of Double Injection

Abstract

.Measurements o~ the high-frequ~ncy noi:e of a silicon double-injection diode result in (i'l)=a• 4kT ( 1/r) ~if With a= 1.04 and m agreement With the literature. A new interpretation demands Nyquist noise with a 121 in these devices at high frequencies. This is in accord with an equivalent circuit derived for the doubleinjection process. Speculations are made on the general validity of Nyquist noise in nonlinear devices at high frequencies. In addition, generation-recombination noise is suggested as the prime source of the lowfrequency noise..

Thermal Noise in Double Injection

“…Both facts are consistent with the idea that generation recombination is the main source of noise at low frequencies. 1,9,10 A dependence of the general form (i 2 )^/ m /(l+co 2 r 2 ), m>l, can be anticipated for that case. Very recent results support the essential features of the model.…”

“…for o)> T" 1 , where r is the common high-level lifetime of the charge carriers, k is Boltzmann's constant, T is the absolute temperature, and g is the differential conductance of the device. 1 Recombination mechanisms cause the nonlinearity of the device.…”

“…1 Recombination mechanisms cause the nonlinearity of the device. 2 At high frequencies (O)>T~1), however, recombination is ineffective.…”

Prognosis methods of stress corrosion cracking under harsh environmental conditions

“…Equivalent circuit fitting is a technique that is done using the frequency response obtained from the discussed plots and finding a mathematical model or equivalent electric circuit that matches the experimental impedance data, which provides insights and information into the underlying electrochemical process occurring within the system [ [94] , [95] , [96] , [97] ]. As explained, the electric circuit uses electrical components, which can be a simple resistor, capacitor, or system impedance.…”