Thermal Noise in Double Injection

Abstract

Noise measurements from 500 kHz to 22 MHz and at ambient temperatures T between 140 and 350°K have been performed on a double-injection silicon diode as a function of operating point. The results indicate that at high frequencies, (i) the noise increases linearly with T, and (ii) the noise also depends linearly on the differential conductance g at the same frequency. Within at most a 5% error, the high-frequency noise is quantitatively represented by Nyquist's formula {i 2 ) = 4kTgAf throughout the experimental range. This proves the thermal nature of the high-frequency noise of double injection. Possible limits on this result and its comparison with alternative theories are discussed.

Thermal noise in double injection diodes operating in the insulator regime

“…Experimental evidence in support of this result for the semiconductor regime is given by Lee and Nicolet [3].…”