Noise in Single and Double Injection Currents in Solids (II)

Unipolar transport and shot noise in metal–semiconductor–metal structures

“…Otherwise, for 1 < l < 10 and 1 < α < 100 the exact result should be used. The dependence of the noise power as the square root of the current corresponds to the well known double thermal noise regime found in space charge limited devices 4,5 (see Eq. ( 2)).…”

“…(1) are expected. These deviations have been studied in detail in two limiting cases, namely: (i) when the structure behaves as a space charge limited diode (with a strong inhomogeneous profile of the free carrier density), [4][5][6] and (ii) when the structure behaves as a linear resistor (with a homogeneous profile of the free carrier density). 7 In the former case (i) the current I displays a quadratic dependence on the applied voltage V (Mott-Gurney law) I = βV 2 , where β is a sample dependent parameter.…”

“…7 In the former case (i) the current I displays a quadratic dependence on the applied voltage V (Mott-Gurney law) I = βV 2 , where β is a sample dependent parameter. Accordingly, the low frequency spectral density of current fluctuations was found to take the form [4][5][6]…”

Resistance fluctuations in hydrogenated amorphous silicon: Nonthermal equilibrium

“…This suppression effect is well established in crystalline semiconductors both theoretically and experimentally for 1/f noise due to mobility fluctuations 14 and GR noise involving a small number of trap levels. 15,16 In any case, the degree of suppression is inherently sensitive to the injecting properties of the contacts that, unfortunately, could not be controlled to a sufficient degree, 17 in spite of the care taken in device preparation.…”