The sputtering rate for silicon dioxide by argon ion bombardment at energies appropriate for ion beam deposition (< 100 eV) has been measured. It has been found that the energy dependence of the oxide sputtering rate at these low energies is easily predicted by assuming the yield is limited by the metallic component of the binary target. This assumption is shown to predict also the sputtering rate of other metallic oxides.
The self-limiting oxidation of silicon by a low-energy ion beam (40-120 eV) is described by an implantation-sputtering model. The thin oxide (40-50 A) is grown primarily by a surface implantation process which leads to a logarithmic increase of oxide thickness with dose in the absence of sputtering. At higher energies (100 eV), the sputtering of the growing film leads to net self-limiting growth. The model, which does not include adjustable parameters, is used to describe the dose evolution of the oxide growth as a function of beam energy. The implantation-sputtering model is found to be in excellent agreement with experimental observations.
Abstract-A low-energy oxygen ion beam with energy below 100 eV has been applied to the oxidation of unheated silicon substrates. Ultrathin ( -45 A) FET-gate-quality oxides have been produced for the first time at room temperature using this technique. The high electrical quality of the oxides is demonstrated by the successful fabrication of n-channel MOSFET's.
Abstract-A novel detector structure exhibiting real-estate efficient coupling of optical fibers to semiconductor devices is described. The integrated fiber-optic coupler employs vertical insertion of a tapered single-mode fiber into a laser-etched cylindrical hole in the substrate. It features a small surface footprint, mechanical stability, and accurate alignment. Fabricated in silicon, the p-n junction detectors have typically shown responsivities of 0.23 A/W at 0.63 pm, corresponding to a quantum efficiency of 45 percent, and dark currents below 1 uA.
Anisotropic orientation dependent etching has been used extensively in the formation of silicon-based micro structures. The technique exploits differences between the etch rates of the low index crystallographic planes for some wet chemical etchants. In particular, solutions of KOH in water have been shown to etch jIll! planes up to several hundred times more slowly than (110) and 11001 planes. This allows fabrication of precise three-dimen sional structures in (110) and (100) oriented silicon wa fers (1, 2). The resulting structures are typically cavities with sidewalls formed by the slow-etching 1111! planes. When the edge of a masking material is aligned with the trace of a (Ill! plane (i.e., its intersection with the surface of the wafer), the etch proceeds with minimal under cutting and the shape of the cavity's opening remains sharply defined.The trace of any plane is a line parallel to the cross product of the vectors normal to the plane and to the wa fer. The angle of intersection between the plane and the wafer's surface is determined by the scalar product of the normal vectors. Thus, vector algebra can be used to find the proper mask orientation and to predict the ge ometry of the cavity. For example, the structure of (100) Si V-grooves (3) is based on the following:(i) the planes (111) and(1 II) both intersect the (100) sur face at an angle(ii) the traces of these planes lie parallel to the direc tionwhich is typically indicated by a flat on the wafer perime ter. Thus, an orientation dependent etch (ODE) per formed through a long rectangular mask opening ori ented parallel to the flat yields a V-shaped groove with a depth-to-width ratio equal to tan (54.7°)/2 = '1'2/2. ExperimentIn this note, we report on an attempt to employ the ODE technique for batch fabrication of cavities suitable for vertically coupling optical fibers to silicon circuitry. We have previously used laser-etched vertical cavities in photodetector structures designed to facilitate high den sity optical interconnection (4). As a processing alterna tive, orientation dependent etching of vertical shafts in (110) Si has been investigated. The cavity provides a me chanical seat for the optical fiber, and should consume a minimum amount of on-chip real estate. Cavities with cross sections approximating that of a single mode fiber core (~10 ",m in diameter) and depths greater than 20 ",m are suitable for this application. All sidewalls must be vertical, and adjacent walls must meet in a sharp edge (a [110] vector), where the transition between [111: planes does not cause deviations from verticality.Previous demonstrations of microstructures etched perpendicular to (110) Si surfaces, such as sets of parallel trenches (5), usually involved one-dimensional mask ge ometries. In these cases, as in the above example of (100) Si V-grooves, the crystallographic structure of the walls at the ends of the long mask openings may be ignored. When two-dimensional mask features were employed, e.g., to fabricate cavities for use as ink wells (6) or as m...
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