Low-energy ion beam oxidation of silicon

Todorov, S. S.; Shillinger, S.L.; Fossum, E. R.

doi:10.1109/edl.1986.26442

Cited by 18 publications

(3 citation statements)

References 7 publications

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“…Additionally the "bird's beak" was minimized. Various methods were tested utilizing microwave plasma oxidation [3] or ion oxidation [4][5][6] or corona-discharge induced oxygen ion beams [7]. The required processing times of all those methods ranged from minutes to hours when maintaining the process temperature below 600 °C, therefore not fulfilling today's throughput and productivity requirements.…”

Section: Introductionmentioning

confidence: 99%

Low temperature plasma oxidation for advanced 3D CMOS‐based devices

Niess

Kegel²,

Lerch³

2013

Phys. Status Solidi C

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The required temperature in semiconductor process technology is going towards two extreme directions. Either very high temperatures (up to 1300 °C) with very short durations on the order of milliseconds are required for highest dopant activation, or extremely low temperatures are needed for forming high‐quality dielectrics with minimum dopant deactivation and redistribution. This contribution describes a new microwave plasma oxidation apparatus with unique features addressing the before‐mentioned low‐temperature process requirements. With this new technique the oxide growth rate was studied as a function of time, gas ambient, pressure, applied microwave power and silicon substrate parameters to determine crystallographic oxidation rate anisotropy and dopant concentration independent oxidation at temperatures well below 500 °C. The “More Moore” approach of geometrical scaling in 2D will soon come to a physical end and therefore new requirements related to the thermal budget occur. Additionally the transition from 2D to 3D devices requires extremely conformal oxide growth. Both the low temperature and conformal oxide growth will be demonstrated on test structures. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

Low temperature plasma oxidation for advanced 3D CMOS‐based devices

Niess

Kegel²,

Lerch³

2013

Phys. Status Solidi C

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“…Additionally the "bird's beak" phenomenon was minimized. Various other methods were also tested at that time for low temperature oxidation utilizing microwaveexcited plasma oxidation (3) or ion oxidation with energies ranging from 100 eV to 200 eV (4,5,6) or corona-discharge induced oxygen ion beams (7). All the used processes ranged from several minutes up to several hours of plasma exposure to grow the necessary oxide at substrate temperatures significantly below 600 °C.…”

Section: Introductionmentioning

confidence: 99%

(Invited) Scaling Requires Continuous Innovation in Thermal Processing: Low-Temperature Plasma Oxidation

et al. 2012

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The required temperature in semiconductor process technology is going in two extreme directions. Either very high temperatures (up to 1300°C) with very short durations on the order of milliseconds are required for highest dopant activation, or extremely low temperatures are needed for forming high-quality dielectrics with minimum dopant deactivation and redistribution. This contribution describes a new microwave plasma oxidation apparatus with unique features addressing the before-mentioned low-temperature process requirements. With this new technique the oxide growth rate was studied as a function of time, gas ambient, pressure, applied microwave power and silicon substrate parameters to determine crystallographic oxidation rate anisotropy and dopant concentration independent oxidation at temperatures well below 500°C. The "More-Moore" approach of geometrical scaling in 2D will soon come to a physical end and therefore new requirements related to the thermal budget occur. Additionally, the transition from 2D- to 3D-devices requires extremely conformal oxide growth. Both the low temperature and the conformal oxide growth will be demonstrated on test structures.

show abstract

“…Additionally, the 'bird's beak' phenomenon was minimized. Various other methods were also tested at that time for low-temperature oxidation utilizing microwave-excited plasma oxidation [3] or ion oxidation with energies ranging from 100 eV to 200 eV [4][5][6] or corona-discharge-induced oxygen ion beams [7]. All the used processes ranged from several minutes up to several hours of plasma exposure to grow the necessary oxide at substrate temperatures significantly below 600 • C. From a current productivity point of view these processing times and the expected full wafer uniformity in the era of 300 mm wafer growing towards 450 mm are not adequate for today's production schemes even though the techniques are highly desirable from a thermal budget point of view.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature processing of semiconductor surfaces by use of a high-density microwave plasma

Lerch

Gschwandtner²,

Schneider³

et al. 2009

Semicond. Sci. Technol.

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The required temperature in semiconductor process technology is going into two extreme directions. Either very high temperatures up to 1300 • C with very short durations in the order of a millisecond or even shorter for highest dopant activation is required, or extremely low temperatures near room temperature or slightly above are needed for forming high-quality dielectrics with minimum dopant deactivation and redistribution. This letter describes a new microwave plasma oxidation apparatus with unique features addressing the aforementioned low-temperature process. With this new technique the oxide growth rate was studied as a function of time, gaseous ambient, pressure, applied microwave power and silicon substrate parameters to determine crystallographic oxidation rate anisotropy and dopant concentration-dependent oxidation at temperatures much below 400 • C. Some tests have also been performed on doped and undoped SiGe material and on patterned structures. The plasma oxides grown on silicon have been electrically characterized regarding fixed charges, interface state densities and breakdown strength. In addition the selective oxidation regimes in the presence of various metals such as W, TiN and TaN were evaluated and determined.

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Low-energy ion beam oxidation of silicon

Cited by 18 publications

References 7 publications

Low temperature plasma oxidation for advanced 3D CMOS‐based devices

Low temperature plasma oxidation for advanced 3D CMOS‐based devices

(Invited) Scaling Requires Continuous Innovation in Thermal Processing: Low-Temperature Plasma Oxidation

Low-temperature processing of semiconductor surfaces by use of a high-density microwave plasma

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