Mesoporous TiO(2) with a large specific surface area (~150 m(2) g(-1)) is the most successful material in dye-sensitized solar cells so far; however, its inferior charge mobility is a major efficiency limiter. This paper demonstrates that random nanowires of Ni-doped TiO(2) (Ni:TiO(2)) have a dramatic influence on the particulate and charge transport properties. Nanowires (dia ~60 nm) of Ni:TiO(2) with a specific surface area of ~80 m(2) g(-1) were developed by an electrospinning technique. The band gap of the Ni:TiO(2) shifted to the visible region upon doping of 5 at% Ni atoms. The Mott-Schottky analysis shows that the flat band potential of Ni:TiO(2) shifts to a more negative value than the undoped samples. The electrochemical impedance spectroscopic measurements showed that the Ni:TiO(2) offer lower charge transport resistance, higher charge recombination resistance, and enhanced electron lifetime compared to the undoped samples. The dye-sensitized solar cells fabricated using the Ni:TiO(2) nanowires showed an enhanced photoconversion efficiency and short-circuit current density compared to the undoped analogue. The transient photocurrent measurements showed that the Ni:TiO(2) has improved charge mobility compared with TiO(2) and is several orders of magnitude higher compared to the P25 particles.
Abstract-An ultrafast on-the-fly technique is developed to study linear drain current (I DLIN ) degradation in plasma and thermal oxynitride p-MOSFETs during negative-bias temperature instability (NBTI) stress. The technique enhances the measurement resolution ("time-zero" delay) down to 1 μs and helps to identify several key differences in NBTI behavior between plasma and thermal films. The impact of the time-zero delay on time, temperature, and bias dependence of NBTI is studied, and its influence on extrapolated safe-operating overdrive condition is analyzed. It is shown that plasma-nitrided films, in spite of having higher N density, are less susceptible to NBTI than their thermal counterparts.Index Terms-Field acceleration, negative-bias temperature instability (NBTI), plasma oxynitride, p-MOSFET, safe-operating voltage, temperature activation, thermal oxynitride, time exponents.
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