The recovery of radiation defects in recrystallized tungsten was studied in the temperature range 400 -1150 K. The defects were created by 20 MeV tungsten ions irradiation at room temperature to a maximum damage level of 0.9 dpa. The samples were then annealed to temperatures of 400 to 1150 K for 1 hour in order to anneal the created defects. After annealing the remaining defects were decorated with D by exposing them to a lowtemperature ECR-plasma at 400 K to a fluence of 1x10 25 D/m 2 . Deuterium was detected by nuclear reaction analysis and temperature programmed desorption. Annealing of defects is observed already at slightly elevated temperatures. At 820 K about 50% of the initial defects were annealed, while still about 30% of the initial defects were present after annealing at 1150 K.

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The influence of helium implanted with MeV energy on deuterium retention in damaged tungsten was investigated. Damage was introduced into the material using self-ion implantation. Two different cases -low (0.02 dpa) and high (0.89 dpa) W damage levels were investigated. Helium was introduced into the resulting damage zone using MeV ion