Deuterium retention in TiC and TaC doped tungsten under low-energy ion irradiation

Deuterium retention in TiC and TaC doped tungsten at high temperatures

“…3). The D inventories in W-3.3TaC and in pure polycrystalline W were similar, and both were several times smaller than the inventory in W-1.1TiC, which in turn was still several times lower than the values obtained in [3] after irradiation at 300 K and 600 K.…”

“…Samples made of toughened, fine-grain recrystallized tungsten doped either with 1.1 wt.% precipitates with dimensions in the range of 0.05-1 m, which are located both inside the W grains and at the grain boundaries [2][3]. In addition, samples made of hot-rolled pure polycrystalline W with dimensions of 10×10×0.8 mm 3 and purity of 99.97 wt.% supplied by PLANSEE (Austria) were used as reference material (called "polycrystalline W" in the text).…”

“…In addition, samples made of hot-rolled pure polycrystalline W with dimensions of 10×10×0.8 mm 3 and purity of 99.97 wt.% supplied by PLANSEE (Austria) were used as reference material (called "polycrystalline W" in the text).…”

“…Toughened, finegrained, recrystallized (TFGR) tungsten-based materials doped either with titanium carbide (TiC) or tantalum carbide (TaC) are promising for use as plasma-facing or structural materials because of their improved ductility at low temperatures, high resistance against radiation damages, and good resistance to crack formation [2]. However [3][4][5], these materials have shown a tendency to retain higher amounts of D at elevated temperatures (>450 K) than pure polycrystalline W. The divertor plates in fusion reactors will operate at high temperatures, e.g., the expected surface temperature around the strike points in ITER is about 1300 K on the outer divertor and about 800 K on the inner divertor [6]. Therefore, this paper is devoted to investigation of trapping effects in the carbide doped W at higher temperatures.…”

Hydrogen Retention in Doped Tungsten Materials Developed for Fusion

“…Накопление водорода в W-TiC и W-TaC. Согласно [52][53][54] В другом эксперименте производилось облучение пучком ионов дейтерия энергией 1 кэВ при температуре в диапазоне 473-873 K. Захват дейтерия в материалы исследовался методами ядерных реакций и ТДС. В диапазоне температуры до 550-700 К W-TiC и W-TaC захватывают близкие количества дейтерия, и существенно большие, чем поликристаллический W. С ростом температуры при Т > 700 К захват в W-TaC спадает гораздо быстрее, и при 773 К W-TiC захватывает в 6 раз больше дейтерия, чем W-TaC.…”