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Influence of the impact angle on the depth resolution and the sensitivity in SIMS depth profiling using a cesium ion beam Abstract: SIMS-a useful complement to other depth profiling techniques

Highly sensitive SIMS measurements of chlorine content in 1000–3000Å of silicon dioxide show that only very small amounts of chlorine (less than 6×1011 cm−2 ) can be found in steam‐grown oxides in which gaseous or liquid normalHCl or TCA has been added during the oxide growth. Oxides grown in dry oxygen with gaseous normalHCl or TCA addition show a large range in chlorine content depending on the growth conditions. Chlorine can be incorporated into steam‐grown oxides at temperatures as low as 750°C when the last 5%–10% of the desired oxide thickness is grown in dry O2 and TCA atmosphere. The activation energy for this process is 2.3 eV. The increase in chlorine content is less than linear with TCA concentration and independent of oxide thickness.

Behvior of toneinduced cochlear responses to potassium concentration elevated by scala tympani perfusion and monitored by ionsensitive electrodes To attemp.t .a.better under~tandi~g of the mechanism of ion detection with ion-sensitive plates, a study was ma~e of sensItIvIty ~s a functIon of IOn energy, and of blackening as a function of exposure. Various commercially avaIlable and expenmental plates used in mass spectrography were investigated. A dc beam of Cs+ ions was used to expose evenl~ areas 0.1 by 0.25 cm on the plates, which were placed between the ion beam monitor collector and .the ma~etIc sector e~trance boundary of an AEI type MS7 double-focusing mass spectrograph. Thus, after leavlllg the IOn source, the IOns traversed only the electrostatic sector portion of the instrument. For the sensitivity study, exposures :vere made with ion energies ranging from 0.1 to 20 keV on Ilford Q2, Kodak SWR, Kodak-PatM SC5, an.d RCA thm-film plates made by the.d!rect evapor~tion of AgBr onto glass (described in a companion paper by H?mg, Woolsto.n, and ~:amer). I~ addItIOn, blackenmg as a function of exposure was determined at various energIes. for each IOn-~ensI~Ive ~ater~al. The .relatio~ship observed between sensitivity and ion energy, when plotted ~n.double-ioganthmic fashion, IS not a SImple linear function, as has been stated by previous investigators but exhIbIts a complex behavior.'

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This paper describes how secondary ion mass spectrometry can be used effectively in semiconductor device materials and process development. A short overview of the experimental technique is given followed by applications in the following areas:1) Basic research2) New Process Development3) Trouble-shooting current processing4) Analysis of competitor's devices.

The energy spectrum and impurity content of a high-power neutral beam are measured by implanting the beam into high-purity silicon crystals. The depth distribution of the beam particles is then measured by secondary ion mass spectrometry (SIMS); the penetration depth is a function of the incident particle energy. This is one of the few measurement techniques that can determine neutral beam energy components directly. From the results, percentages of atomic and molecular ions in the source plasma can be inferred. Use of deuterium as the source gas provides insight into the role of residual hydrogen in the ion source and accelerating grids and in the SIMS analysis. The principal impurities are carbon and oxygen. Preliminary data indicate that carbon can originate from both methane and carbon monoxide, while oxygen can come from molecular oxygen, carbon monoxide, and water. Results are given and future plans are discussed.

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