On the use of CsX+ cluster ions for major element depth profiling in secondary ion mass spectrometry

Magee, C. W.; Harrington, William L.; Botnick, E. M.

doi:10.1016/0168-1176(90)80015-u

Cited by 111 publications

(43 citation statements)

References 7 publications

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“…It has been confirmed that depth profiles for iron based alloys by these ions are almost consisted with were quantitative depth profiles obtained by glow discharge optical emission spectrometry, in which the matrix effect is small. 6,7) In addition, since the matrix effect of CsM ϩ ions is known to be relatively small, as reported in previous works, [14][15][16] depth profiles of these ions are considered to reasonably correspond to depth distribution of silicon, manganese, oxygen and iron. A surface profiler, Dektak-3, was used for measuring the depth sputtered by SIMS.…”

Section: Sample Preparationmentioning

confidence: 99%

SIMS/XPS Studies of Surface Layer Formed in Fe-Si-Mn Alloys by Oxygen Penetration.

et al. 2003

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Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) have been used for analyzing surface layers formed in Fe-Si-Mn alloys containing 1, 2, 3 and 4.5 mass% silicon, which were annealed in hydrogen and argon gases with a low partial pressure of oxygen. SIMS depth profiles showed that silicon in these alloys is reacted with oxygen penetrating into the bulk to form silicon oxides, and the characteristic distribution of silicon oxides is obtained in the surface layer, depending on the bulk silicon concentration. Manganese in the alloys was also found to be enriched to the outer side of the surface layer. On the other hand, XPS results showed that silicon and manganese are enriched on the top surface in these alloys, and the surface concentration of these elements depends on the bulk silicon concentration.KEY WORDS: secondary ion mass spectrometry; X-ray photoelectron spectroscopy; iron-silicon-manganese alloys; oxidation.

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Section: Sample Preparationmentioning

confidence: 99%

SIMS/XPS Studies of Surface Layer Formed in Fe-Si-Mn Alloys by Oxygen Penetration.

et al. 2003

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“…The XCs + secondary ions are understood to be formed by the combination of a resputtered Cs + ion with a sputtered neutral atom from the specimen [9][10][11][12][13][14][15][16][17]. Since secondary neutrals are formed as different atomic clusters [17][18][19][20], the intensities of the Cs complexes of all these clusters should be combined to enhance the quantitativeness of XCs SIMS.…”

Section: Theorymentioning

confidence: 99%

“…However, there is considerable deviation of the composition computed from these XCs n signals from the actual composition. In spite of developments in understanding the formation process of these species (for example, ref [9][10][11][12][13][14][15][16][17]), a gap remains in this approach in reaching complete quantification. The current work provides an incremental step in filling this gap.…”

Section: Introductionmentioning

confidence: 99%

Mass spectral analysis and quantification of Secondary Ion Mass Spectrometry data

Balamurugan

Dash

Tyagi

2015

International Journal of Mass Spectrometry

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This work highlights the possibility of improving the quantification aspect of Cs-complex ions in SIMS (Secondary Ion Mass Spectrometry), by combining the intensities of all possible Cs-complexes. Identification of all possible Cs-complexes requires quantitative analysis of mass spectrum from the material of interest. The important steps of this mass spectral analysis include constructing fingerprint mass spectra of the constituent species from the table of isotopic abundances of elements, constructing the system(s) of linear equations to get the intensities of those species, solving them, evaluating the solutions and employing a regularization process when required. These steps are comprehensively described and the results of their application on a SIMS mass spectrum obtained from D9 steel are presented. It is demonstrated that results from the summation procedure, which covers entire range of sputtered clusters, is superior to results from single Cs-complex per element. The result of employing a regularization process in solving a mass spectrum from an SS316LN steel specimen is provided to demonstrate the necessity of regularization.

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“…In the past, it has been demonstrated that bombardment by Cs + ions can be used as a means of post-ionization in secondary ion mass spectrometry [4][5][6][7]. Experiments have indicated that the formation of CsM + clusters occurs by recombination of Cs + ions and sputtered neutral sample atoms above the sample surface, which implies that the sputter and ionization processes have become two independent phenomena [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…Experiments have indicated that the formation of CsM + clusters occurs by recombination of Cs + ions and sputtered neutral sample atoms above the sample surface, which implies that the sputter and ionization processes have become two independent phenomena [5,6].…”

Section: Introductionmentioning

confidence: 99%

Quantification of impurities in brass using secondary ion mass spectrometry: a comparison of matrix effects for CsM+ clusters and M+ ions

Adriaens

Férauge

Adams

1995

International Journal of Mass Spectrometry and Ion Processes

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This study discusses the influence of matrix effects on relative sensitivity factors in secondary ion mass spectrometry for a quantification study of major and impurity elements in standard brass reference materials. A comparison has been made between relative sensitivity factors, which are obtained through acquisition of CsM + clusters under cesium bombardment and of M + ions under oxygen bombardment. The data of the present study suggest that the matrix effects have been reduced in the case of cesium clusters, but nevertheless remain significant. In addition, the reproducibility for determining relative sensitivity factors improves significantly for cesium clusters.

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On the use of CsX+ cluster ions for major element depth profiling in secondary ion mass spectrometry

Cited by 111 publications

References 7 publications

SIMS/XPS Studies of Surface Layer Formed in Fe-Si-Mn Alloys by Oxygen Penetration.

SIMS/XPS Studies of Surface Layer Formed in Fe-Si-Mn Alloys by Oxygen Penetration.

Mass spectral analysis and quantification of Secondary Ion Mass Spectrometry data

Quantification of impurities in brass using secondary ion mass spectrometry: a comparison of matrix effects for CsM+ clusters and M+ ions

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