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Material models which incorporate the basic characteristics of the underlying physics in a given semiconductor material are the core of device modeling. We employ a Monte Carlo (MC) technique to investigate stationary electron transport in GaN and AlGaN [1]. We obtain a set of model parameters which gives agreement with experimental data available for different physical conditions (doping, temperature, electric field, etc.). Such a calibrated set of models and model parameters delivers valuable data for low-field mobility, velocity saturation, energy relaxation times, etc. We use these data as a basis for the development of analytical models for the numerical simulation of GaN-based electron devices. As a particular example we analyze an AlGaN/GaN HEMT with lg=300 nm from IAF using the two-dimensional device simulator Minimos-NT [2]. We study the impact of different models and efects (polarization charge, thermionic field emission, self-heating effects).

e15 e22 [C/m21 e31 e33 W m 2 l 4 3 I601 4 1 kol AbstractA nonlinear least squares algorithm to determine the material constants of LiNbO3 from primary SAW velocity measurements is shown. If at least to some accuracy the values of the mass density p and the unclamped permittivities are known, all 13 independent elastic, piezoelectric and dielectric constants are obtained with high precision. This method is not restricted to LiNbO3 only, but can be applied to other strong coupling materials as well.