An overview of the most recent developments and improvements to the low-loss TriPleX Si 3 N 4 waveguide technology is presented in this paper. The TriPleX platform provides a suite of waveguide geometries (box, double stripe, symmetric single stripe, and asymmetric double stripe) that can be combined to design complex functional circuits, but more important are manufactured in a single monolithic process flow to create a compact photonic integrated circuit. All functionalities of the integrated circuit are constructed using standard basic building blocks, namely straight and bent waveguides, splitters/combiners and couplers, spot size converters, and phase tuning elements. The basic functionalities that have been realized are: ring resonators and Mach-Zehnder interferometer filters, tunable delay elements, and waveguide switches. Combination of these basic functionalities evolves into more complex functions such as higher order filters, beamforming networks,
We report on the spectral properties of a diode laser with a tunable external cavity mirror, realized as an integrated optics waveguide circuit. Even though the external cavity is short compared to that of other narrow bandwidth external cavity lasers, the spectral bandwidth of this tunable laser is as small as 25 kHz (FWHM). The side-mode suppression ratio (SMSR) is 50 dB. The laser is able to access preset wavelengths in 200 μs and can be tuned over the full telecommunications C-band (1530–1565 nm).
A reconfigurable four channel OADM based on vertically coupled thermally tunable SilNliSiOz microring resonators has a footprint of 0.25 mm'. Each MR can be tuned over 4.3 nm and has a bandwidth >I0 GBit.
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 µm wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.
Extending the cavity length of diode lasers with feedback from Bragg structures and ring resonators is highly effective for obtaining ultra-narrow laser linewidths. However, cavity length extension also decreases the free-spectral range of the cavity. This reduces the wavelength range of continuous laser tuning that can be achieved with a given phase shift of an intracavity phase tuning element. We present a method that increases the range of continuous tuning to that of a short equivalent laser cavity, while maintaining the ultra-narrow linewidth of a long cavity. Using a single-frequency hybrid integrated InP-Si3N4 diode laser with 120 nm coverage around 1540 nm, with a maximum output of 24 mW and lowest intrinsic linewidth of 2.2 kHz, we demonstrate a six-fold increased continuous and mode-hop-free tuning range of 0.22 nm (28 GHz) as compared to the free-spectral range of the laser cavity. arXiv:1912.09455v1 [physics.optics]
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