The Perkins instability theory for mid‐latitude spread F is generalized to include the effects of the E region on growth rates. A three‐layer model, representing the E region, the F region, and a resistive layer of low Pedersen conductivity which separates them, is developed. The E region Pedersen current has a stabilizing effect on the perturbed F region, thereby reducing the growth rate of the instability. For spread F onset on September 17, 1974, the maximum growth rate is found to be only one third of the Perkins growth rate. The resistive layer reduces the electric field perturbation in the E region for short wavelengths but has little effect for long wavelengths.

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A theoretical model is developed to describe the behavior of an ion-injection electrostatic confinement device. It is assumed that there is a shallow potential well in the center. Distribution functions, which are consistent with atomic processes occurring and with mechanisms leading to particle angular momentum, are obtained for ions and electrons. Using these distribution functions, Poisson's equation is solved to obtain potential and density profiles. By varying the experimental parameters, the conditions needed to go from a shallow potential well to a deep potential well are studied. The most important problems are found to be nonspherical focusing through grid construction asymmetry, and neutralization by electrons. Deeper wells are produced by increasing ion perveance, improving spherical symmetry, and reducing pressure.

A general expression for the high-frequency conductivity of a homogeneous, isotropic plasma is obtained. The derivation is based on the use of the Bogoliubov-Born-Green-Kirkwood-Yvon hierarchy and therefore includes all effects due to the high-frequency field and the collective interactions up to first order in the plasma parameter. As an application of the general result, a two-temperature plasma with the electron temperature exceeding the ion temperature is studied in detail. It is found that when the ratio of the electron temperature to the ion temperature exceeds 100, there is an enhancement in the resistivity resulting from the excitation of incoherent ion waves. f 1 T / du J € + (-u)e~(-w-u)L

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