It is shown experimentally that the use of ion irradiation allows one to convert superconducting thin-film niobium nitride into dielectric niobium oxide in a controllable manner. The conversion of NbN into Nb 2 O 5 throughout the entire thickness of the film is demonstrated via transmission electron microscopy and layer-by-layer XPS analysis. This conversion is followed by a corresponding increase in the film thickness with no signs of sputtering and thus provides the possibility of forming dielectric regions of the required sizes and shapes in the process of fabrication of various functional cryoelectronic elements.
The influence of a quasicrystalline Al-Pd-Re film on the shift and broadening of surface polari tons of a substrate (sapphire) has been studied. Measurements have been performed both on a sample con taining only the quasicrystalline phase and on a sample which, in addition to the quasicrystalline phase, con tains the crystalline (metallic) phase. The complex dielectric function of the films in the mid IR region (650⎯800 cm -1 ) has been estimated.
Summary.Key circumstance of radical progress for technology of XXI century is the development of a technique which provides controllable producing three-dimensional patterns incorporating regions of nanometer sizes and required physical and chemical properties. Our paper for the first time proposes the method of purposeful direct transformation of the most important substance physical properties, such as electrical, magnetic, optical and others by controllable modification of solid state atomic constitution.The basis of the new technology is discovered by us effect of selective atom removing out of thin di-and polyatomic films by beams of accelerated particles. Potentials of that technique have been investigated and confirmed by our numerous experiments. It has been shown, particularly, that selective atom removing allows to transform in a controllable way insulators into metals, non-magnetics into magnetics, to change radically optical features and some other properties of materials.The opportunity to remove selectively atoms of a certain sort out of solid state compounds is, as such, of great interest in creating technology associated primarily with needs of nanoelectronics as well as many other "nano-problems" of XXI century.Introduction.
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