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Degradation of chemical composition of porous low-k films under extreme and various vacuum ultraviolet emissions is studied using specially developed sources. It is shown that the most significant damage is induced by Xe line emission (147 nm) in comparison with Ar (106 nm), He (58 nm), and Sn (13.5 nm) emissions. No direct damage was detected for 193 nm emission. Photoabsorption cross-sections and photodissociation quantum yields were derived for four films under study. 147 nm photons penetrate deeply into low-k films due to smaller photoabsorption cross-section and still have sufficient energy to excite Si-O-Si matrix and break Si-CH3 bonds.

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