Copper–alkali ion exchange is used for doping superficial layers of different silicate glasses (commercial soda-lime and BK7) with copper ions. Spectroscopic and time-resolved photoluminescence properties of the obtained systems are studied in the range of 80–294 K. Analysis indicates the presence of Cu+ ions located in distorted octahedral sites, and a different position of the triplet electronic levels for the two glass matrices. The luminescence decay-time signal is simulated by a biexponential behavior, interpreted on the basis of a four-level scheme
GaN nanocrystals (in the wurtzite phase) were synthesized by sequential implantation of Ga and N ions into either crystalline (quartz, sapphire) or amorphous (silica) dielectrics, followed by annealing of the samples in flowing NH3 gas at 900 degreesC. GaN was formed by reaction of implanted Ga with NH3 combustion products and/or via conversion of Ga oxide/oxynitrides. A blueshift of the near-band-edge photoluminescence (quantum-confinement effect) was observed for GaN nanocrystals with size less than or equal to2-3 nm, present in all the substrates
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