Synthesis of GaN quantum dots by ion implantation in dielectrics

Borsella, E.; García, M. A.; Mattei, Giovanni; Maurizio, C.; Mazzoldi, P.; Cattaruzza, Elti; Gonella, Francesco; Battaglin, Giancarlo; Quaranta, A.; d’Acapito, Francesco

doi:10.1063/1.1408591

Cited by 51 publications

(34 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…[2] Gallium nitride (GaN) is a widely used III-V semiconductor in micro-and optoelectronic devices, such as blue light-emitting diodes and lasers. GaN quantum structures (or nanodots) have received particular attention for potential applications in lightemitting diodes [3,4,5] and high-temperature electronic devices. [2] GaN nanodots have been synthesised experimentally by various methods, including colloidal dispersion, [6] ion implantation, [7,4] molecular beam epitaxy, [5] and metal-organic chemical vapour deposition.…”

Section: Introductionmentioning

confidence: 99%

“…GaN quantum structures (or nanodots) have received particular attention for potential applications in lightemitting diodes [3,4,5] and high-temperature electronic devices. [2] GaN nanodots have been synthesised experimentally by various methods, including colloidal dispersion, [6] ion implantation, [7,4] molecular beam epitaxy, [5] and metal-organic chemical vapour deposition. [8] One of the most notable aspects of quantum confinement in semiconductors is the nanostructure size dependence of the band gap; namely, the band gap increases as the size decreases.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Quantum confinement effects in gallium nitride nanostructures:ab initioinvestigations

Carter¹,

Puckeridge²,

Delley³

et al. 2009

Nanotechnology

View full text Add to dashboard Cite

Abstract. We present ab initio density functional investigations of the atomic and electronic structure of gallium nitride nanodots and nanowires. With increasing diameter, the average Ga-N bond length in the nanostructures increases, as does the relative stability (heat of formation), approaching the values for bulk GaN. As the diameter decreases, the band gap increases, with the variation of the nanodots greater than that of the nanowires, in qualitatively accordance with expectations based on simple geometrical quantum confinement considerations.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Quantum confinement effects in gallium nitride nanostructures:ab initioinvestigations

Carter¹,

Puckeridge²,

Delley³

et al. 2009

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…A number of nanocrystalline GaN studies were reported through some grown techniques (Mićić et al 1999;Borsella et al 2001;Miyamura et al 2002;Zhuang et al 2013;Gyger et al 2014). GaN quantum dots were grown by Miyamura et al (2002) through low-pressure metalorganic chemical vapor deposition.…”

Section: Introductionmentioning

confidence: 99%

“…Two blue-shifted PL peaks were observed at 4.18 and 3.59 eV for two different quantum dot structures. Hexagonal nanocrystalline GaN with the size of 2-3 nm was generated by Borsella et al (2001) via sequential Ga and N ions implantation into crystalline and amorphous dielectrics tracked by annealing of the samples GaN in flowing ammonia gas at 900°C. Recently, quantum-confined cubic GaN nanoparticles with the size of 3-4 nm have been synthesized by Gyger et al (2014) via liquid-ammonia-in-oil-microemulsions.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of blue-shifted luminescent colloidal GaN nanocrystals through femtosecond pulsed laser ablation in organic solution

et al. 2016

View full text Add to dashboard Cite

We demonstrate the synthesis of GaN nanocrystals (NCs) with the sizes of less than the doubled exciton Bohr radius leading quantum confinement effects via a single-step technique. The generation of colloidal GaN nanoparticles (NPs) in organic solution through nanosecond (ns) and femtosecond (fs) pulsed laser ablation (PLA) of GaN powder was carried out. Ns PLA in ethanol and polymer matrix resulted in amorphous GaN-NPs with the size distribution of 12.4 ± 7.0 and 6.4 ± 2.3 nm, respectively, whereas fs PLA in ethanol produced colloidal GaN-NCs with spherical shape within 4.2 ± 1.9 nm particle size distribution. XRD and selected area electron diffraction analysis of the product via fs PLA revealed that GaN-NCs are in wurtzite structure. Moreover, X-ray photoelectron spectroscopy measurements also confirm the presence of GaN nanomaterials. The colloidal GaN-NCs solution exhibits strong blue shift in the absorption spectrum compared to that of the GaN-NPs via ns PLA in ethanol. Furthermore, the photoluminescence emission behavior of fs PLA-generated GaN-NCs in the 295-400 nm wavelength range is observed with a peak position located at 305 nm showing a strong blue shift with respect to the bulk GaN.

show abstract

“…However, the literature on GaN ion synthesis in silicon or in Si-compatible matrices is almost absent. Only one research group [7,8] has reported on the synthesis of light-emitting GaN crystallites in SiO 2 and Al 2 O 3 matrices after co-implantation of gallium and nitrogen ions and subsequent annealing in ammonia atmosphere.…”

Section: Introductionmentioning

confidence: 99%

Ion-beam synthesis of GaN in silicon

Сергеев

Королев

Mikhaylov

et al. 2015

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Abstract. The structure and composition of a subsurface silicon layer subjected to a dual implantation of Ga and N ions with subsequent annealing have been investigated using X-ray photoelectron spectroscopy, electron spin resonance, X-ray diffraction, Raman microscopy, transmission electron microscopy. The results indicate a possibility of ion-beam synthesis of GaN composite nanostructures in silicon-based materials. IntroductionNew development stage of electronic technologies is characterized by the transfer from conventional microelectronics to optoelectronics and integrated optics. This requires synthesis of light emitters and photodetectors on a single chip for different ranges of wavelengths, including the ultra-violet range. A key material of conventional microelectronics -silicon -cannot be used as an efficient light source because of its indirect band gap. This fact has stimulated the search for other light-emitting materials compatible with silicon technology. Such a compatibility would allow the usage of tremendous longterm achievements of silicon technology and could give high economic effect. For example, the cost of a silicon wafer is seven times lower than that of a GaAs wafer of the same area.It is known that LEDs, lasers and photodetectors on the basis of III-nitrides, in particular gallium nitride, have excellent performance as well as high resistance to radiation, chemically aggressive environment and temperature. However, there is a problem of high cost of GaN and difficulties of its integration into a silicon or other low-cost substrates. Fabrication of high-quality epitaxial III-nitride layers on silicon is difficult due to the high lattice mismatch and differences in thermal expansion coefficients of the materials [1]. It results in a high dislocation density (more than 1·10 6 cm -2 ) and the degradation of device performance.One of the perspective solutions to this problem is the ion-beam synthesis of III-V (especially GaN) nanocrystals by dual (sequential) ion implantation into silicon or into dielectric films (SiO 2 , Si 3 N 4 , Al 2 O 3 , HfO 2 , etc.) deposited on silicon substrate. An advantage of ion implantation over the other synthesis methods (like epitaxy) is in a high controllability of the implanted layer composition and concentration of implanted atoms (not restricted by the thermodynamic solubility limit), an ability of local phase synthesis with focused implantation, and perfect compatibility of this method with the existing CMOS-technology. Using ion implantation with subsequent annealing permit to synthesize not only continuous layers, but semiconductor nanocrystals in different matrices, including amorphous matrices.

show abstract

Synthesis of GaN quantum dots by ion implantation in dielectrics

Cited by 51 publications

References 19 publications

Quantum confinement effects in gallium nitride nanostructures:ab initioinvestigations

Quantum confinement effects in gallium nitride nanostructures:ab initioinvestigations

Synthesis of blue-shifted luminescent colloidal GaN nanocrystals through femtosecond pulsed laser ablation in organic solution

Ion-beam synthesis of GaN in silicon

Contact Info

Product

Resources

About