Using our program, TRansient Amorphous DEvice Simulator (TRADES), for the simulation of transient phenomena in amorphous silicon devices, the transient response after turning the light off is numerically calculated. Parameters for the numerical analysis are obtained by fitting the two families of the measured steady-state characteristics: light-intensity and temperature dependence of the secondary photocurrent. Using these parameters, both temperature and light-intensity dependence of the transients are calculated. It is shown that the transient is faster at higher temperatures and at higher illumination levels. Results are compared with measured transients at different temperatures.
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