The idea of a hidden sector of mirror partners of elementary particles has attracted considerable interest as a possible candidate for dark matter.Recently it was pointed out by Berezhiani and Bento that the present experimental data cannot exclude the possibility of a rapid oscillation of the neutron n to a mirror neutron n′ with oscillation time much smaller than the neutron lifetime. A dedicated search for vacuum transitions n → n′ has to be performed at weak magnetic field, where both states are degenerate. We report the result of our experiment, which compares rates of ultracold neutrons after storage at a weak magnetic field well below 20 nT and at a magnetic field strong enough to suppress the seeked transitions. We obtain a new limit for the oscillation time of n-n' transitions, τ osc (90% C.L.) > 414 s.The corresponding limit for the mixing energy of the normal and mirror neutron states is δm (90% C.L.) < 1.5×10 -18 eV.

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The present paper describes a three-dimensional (3D) thick-photoresist microstructuring technique that exploits the effect of exposure wavelength on dissolution rate distributions in a thick-film diazonaphthoquinone (DNQ) photoresist. In fabricating 3D microstructure with specific applications, it is important to control the spatial dissolution rate distribution in the photoresist layer, since the lithographic performance for 3D microstructuring is largely determined by the details of the dissolution property. To achieve this goal, the effect of exposure wavelength on dissolution rate distributions was applied for 3D microstructuring. The parametric experimental results demonstrated (1) the advantages of the fabrication technique for 3D microstructuring and (2) the necessity of a dedicated simulation approach based on the measured thick-photoresist property for further verification. Thus, a simple and practical photolithography simulation model that makes use of the Fresnel diffraction theory and an empirically characterized DNQ photoresist property was adopted. Simulations revealed good quantitative agreement between the photoresist development profiles of the standard photolithography and the moving-mask UV lithography process. The simulation and experimental results conclude that the g-line (λ = 436 nm) process can reduce the dimensional limitation or complexity of the photolithography process for the 3D microstructuring which leads to nanoscale microstructuring.

This paper is an extension of a part of the talk delivered under the more general title``Narrow spectral lines in fundamental metrology: state of the art, prospects, and problems'' at the session of the 90th anniversary of Physics± Uspekhi. The talk reviewed past developments and the current status of the metrology of length, frequency/time, and magnetic fields. The measurement of these quantities currently relies on the high stability of energies of standard transitions between metastable atomic states. Because of space restrictions in the journal, all metrology topics other than the title one were omitted in the present review.

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