Due to the large surface area‐to‐volume ratio and high quality crystal structure, single nanowire (NW)‐based UV sensors exhibit very high on/off ratios between photoresponse current and dark current. Practical applications require a large‐scale and low‐cost integration, compatibility to flexible electronics, as well as reasonably high photoresponse current that can be detected without high‐precision measurement systems. In this paper, NW‐based UV sensors were fabricated in large‐scale by integrating multiple NWs connected in parallel via the contact printing method. Linear scaling of the photoresponse current with the number of NWs is demonstrated. Integrated ZnO NW UV sensors were fabricated on rigid glass and flexible polyester (PET) substrates at the macroscopic scale. The flexible and rigid sensors performed comparably, exhibiting on/off current ratios approximately three orders of magnitude higher than sensors made from polycrystalline ZnO thin films. Under UV irradiance of 4.5 mW cm−2 and 3 V bias, photoresponse currents and on/off current ratios for the rigid and flexible UV sensors reached 12.22 mA and 82 000, and 14.1 mA and 120 000, respectively. This result suggests that lateral integration of semiconductor NWs is an effective approach to large‐scale fabrication of flexible NW sensors that inherit the merits of single‐NW‐based systems with unaffected performance compared to using rigid substrate.

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Gallium nitride (GaN) is an important commercial semiconductor for solid-state lighting applications. Atomically thin GaN, a recently synthesized two-dimensional material, is of particular interest because the extreme quantum confinement enables additional control of its light-emitting properties. We performed first-principles calculations based on density functional and many-body perturbation theory to investigate the electronic, optical, and excitonic properties of monolayer and bilayer two-dimensional (2D) GaN as a function of strain. Our results demonstrate that light emission from monolayer 2D GaN is blueshifted into the deep ultraviolet range, which is promising for sterilization and water-purification applications. Light emission from bilayer 2D GaN occurs at a similar wavelength to its bulk counterpart due to the cancellation of the effect of quantum confinement on the optical gap by the quantum-confined Stark shift. Polarized light emission at room temperature is possible via uniaxial in-plane strain, which is desirable for energy-efficient display applications. We compare the electronic and optical properties of freestanding two-dimensional GaN to atomically thin GaN wells embedded within AlN barriers in order to understand how the functional properties are influenced by the presence of barriers. Our results provide microscopic understanding of the electronic and optical characteristics of GaN at the few-layer regime.

We present the theoretical and experimental results for the electronic and optical properties of atomically thin (1 and 2 monolayers) GaN quantum wells with AlN barriers. Strong quantum confinement increases the gap of GaN to as high as 5.44 eV and enables light emission in the deep-UV range. Luminescence occurs from the heavy and light hole bands of GaN yielding E ⊥ c polarized light emission. Strong confinement also increases the exciton binding energy up to 230 meV, preventing a thermal dissociation of excitons at room temperature. However, we did not observe excitons experimentally due to high excited free-carrier concentrations. Monolayer-thick GaN wells also exhibit a large electron-hole wave function overlap and negligible Stark shift, which is expected to enhance the radiative recombination efficiency. Our results indicate that atomically thin GaN/AlN heterostructures are promising for efficient deep-UV optoelectronic devices.

An aqueous solution-based doping strategy was developed for controlled doping impurity atoms into a ZnO nanowire (NW) lattice. Through this approach, antimony-doped ZnO NWs were successfully synthesized in an aqueous solution containing zinc nitrate and hexamethylenetetramine with antimony acetate as the dopant source. By introducing glycolate ions into the solution, a soluble antimony precursor (antimony glycolate) was formed and a good NW morphology with a controlled antimony doping concentration was successfully achieved. A doping concentration study suggested an antimony glycolate absorption doping mechanism. By fabricating and characterizing NW-based field effect transistors (FETs), stable p-type conductivity was observed. A field effect mobility of 1.2 cm(2) V(-1) s(-1) and a carrier concentration of 6 × 10(17) cm(-3) were achieved. Electrostatic force microscopy (EFM) characterization on doped and undoped ZnO NWs further illustrated the shift of the metal-semiconductor barrier due to Sb doping. This work provided an effective large-scale synthesis strategy for doping ZnO NWs in aqueous solution.

We use first-principles calculations based on many-body perturbation theory to investigate the near-edge electronic and optical properties of β-Ga 2 O 3 . The fundamental band gap is indirect, but the minimum direct gap is only 29 meV higher in energy, which explains the strong near-edge absorption. Our calculations verify the anisotropy of the absorption onset and explain the range (4.4-5.0 eV) of experimentally reported band-gap values. Our results for the radiative recombination rate indicate that intrinsic light emission in the deep-UV range is possible in this indirect-gap semiconductor at high excitation.Our work demonstrates the applicability of β-Ga 2 O 3 for deep-UV detection and emission.The β phase of gallium oxide (β-Ga 2 O 3 ) is a promising wide-band-gap semiconductor for power electronics, deep-UV optoelectronics, and transparent conductors. Its large band gap results in a high breakdown voltage (8 MV/cm) desirable for power electronics, 1 such as field effect transistors (FETs) and Schottky barrier diodes. [2][3][4] The large gap also results in visible and ultra-violet (UV) transparency.Solar-blind photodetectors have been successfully fabricated with β-Ga 2 O 3 nanostructures, such as nanowires 5 and nanobelts 6 . These devices demonstrate the potential of β-Ga 2 O 3 in electronic and optoelectronic applications.Despite numerous experimental and theoretical studies on β-Ga 2 O 3 , the nature and value of its fundamental band gap remain controversial. The room-temperature (RT) gap from optical absorption measurements ranges from 4.4 to 5.0 eV. 7 This controversy is partially due to the anisotropy of the crystal structure, which causes the absorption onset to depend on the polarization of the incident light.In addition, the small energy difference between the direct and indirect gaps has led to claims that the fundamental gap is direct. 8,9 Other open questions regard luminescence from this material. Most photoluminescence studies do not show the intrinsic emission across the gap in the deep UV (~265-278 nm) but only emission in the UVA to visible range (~350-600 nm). 10 An exception is the report by Li et al (2010) of luminescence at ~265 nm and ~278 nm, which correspond to the experimentally reported

Conversion of CO₂ to value-added chemicals and fuels is a potentially valuable route for renewable energy storage and a future CO₂-neutral economy. The first step is CO₂ conversion to CO...

Group III nitrides are widely used in commercial visible-wavelength optoelectronic devices, but materials issues such as dislocations, composition fluctuations, and strain negatively impact their efficiency. Nitride nanostructures are a promising solution to overcome these issues and to improve device performance. We used first-principles calculations based on many-body perturbation theory to study the electronic and optical properties of small-diameter InN nanowires. We show that quantum confinement in 1 nm wide InN nanowires shifts optical emission to the visible range at green/cyan wavelengths and inverts the order of the top valence bands, leading to linearly polarized visible-light emission. Quantum confinement on this scale also leads to large exciton binding energies of 1.4 eV and electronic band gaps in excess of 3.7 eV. Our results indicate that strong quantum confinement in InN nanostructures is a promising approach to developing efficient visible-wavelength light emitters.