Visible-Wavelength Polarized-Light Emission with Small-Diameter InN Nanowires

Bayerl, Dylan; Kioupakis, Emmanouil

doi:10.1021/nl404414r

Cited by 34 publications

(31 citation statements)

References 67 publications

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“…Significant improvements are also required in the understanding of current transport to develop efficient next-generation LEDs, most of which rely on very complex nanostructures. [2][3][4][5][6][7][8][9][10][11][12] Most simulation models for current transport in III-N LEDs assume that the carriers follow quasi-equilibrium distributions. [13][14][15][16] However, recent experimental works have indicated a strong correlation between the efficiency droop and hot carriers that cannot be modeled with quasi-equilibrium models.…”

Section: Introductionmentioning

confidence: 99%

Bipolar Monte Carlo simulation of electrons and holes in III-N LEDs

et al. 2015

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Recent measurements have generated a need to better understand the physics of hot carriers in III-Nitride (III-N) lightemitting diodes (LEDs) and in particular their relation to the efficiency droop and current transport. In this article we present fully self-consistent bipolar Monte Carlo (MC) simulations of carrier transport for detailed modeling of charge transport in III-N LEDs. The simulations are performed for a prototype LED structure to study the effects of hot holes and to compare predictions given by the bipolar MC model, the previously introduced hybrid Monte Carlo-drift-diffusion (MCDD) model, and the conventional drift-diffusion (DD) model. The predictions given by the bipolar MC model and the MCDD model are observed to be almost equivalent for the studied LED. Therefore our simulations suggest that hot holes do not significantly contribute to the basic operation of multi-quantum well LEDs, at least within the presently simulated range of material parameters. With the added hole transport simulation capabilities and fully self-constistent simulations, the bipolar Monte Carlo model provides a state-of-the-art tool to study the fine details of electron and hole dynamics in realistic LED structures. Further analysis of the results for a variety of LED structures will therefore be very useful in studying and optimizing the efficiency and current transport in next-generation LEDs.

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Section: Introductionmentioning

confidence: 99%

Bipolar Monte Carlo simulation of electrons and holes in III-N LEDs

et al. 2015

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“…One avenue to avoid localization is to use binary nitride compounds and tune the gap by engineering the polarization fields or the quantumconfinement dimensions. 29,30 Another promising avenue to mitigate Auger recombination is to reduce the steady-state carrier density with fewer, thicker InGaN QWs (e.g., a double-heterostructure design up to 12 nm thick). 6,31 In conclusion, we quantify the effect of carrier localization due to alloy fluctuations on the IQE of InGaN QWs.…”

mentioning

confidence: 99%

Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations

Jones

Teng

Yan

et al. 2017

Applied Physics Letters

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We examine the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composition, crystal orientation, carrier density, and temperature. Our results show that alloy fluctuations reduce individual transition matrix elements by the separate localization of electrons and holes, but this effect is overcompensated by the additional transitions enabled by translational symmetry breaking and the resulting lack of momentum conservation. Hence, we find that localization increases both radiative and Auger recombination rates, but that Auger recombination rates increase by one order of magnitude more than radiative rates. Furthermore, we demonstrate that localization has an overall detrimental effect on the efficiency-droop and green-gap problems of InGaN LEDs.

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“…III-N-based NWs grown on low cost, large-area substrates hold promises in applications in solid state lighting and full-color displays [65], and InAs and InP NWs grown on Si as near infra-red emitters [66]. Emission wavelengths ranging from UV to near-infrared have been demonstrated using GaN-based NW heterostructures, where small diameter InN-NWs are considered as one candidate technology which can bridge the "green gap" [67]. Additionally, room temperature phosphor-free white-light emission in the mW range has been realized by GaN nanowire LEDs [68].…”

Section: Outlook Of Ddct-based Ledsmentioning

confidence: 99%

Diffusion-Driven Charge Transport in Light Emitting Devices

Kim¹,

Kivisaari²,

Oksanen³

et al. 2017

Preprint

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Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses which arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto-and microelectronics.

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Visible-Wavelength Polarized-Light Emission with Small-Diameter InN Nanowires

Cited by 34 publications

References 67 publications

Bipolar Monte Carlo simulation of electrons and holes in III-N LEDs

Bipolar Monte Carlo simulation of electrons and holes in III-N LEDs

Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations

Diffusion-Driven Charge Transport in Light Emitting Devices

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