The interaction of halogens on GaAs surfaces lies at the heart of a whole host of dry-etching methods. This paper considers the adsorption characteristics of chlorine on GaAs(100)(4x 1) and the effect of low-energy ion bombardment on the chemisorbed states formed. The results are discussed in relation to ultra-low damage and low contamination chemically assisted ion beam etching (CAIBE) processes.
The scope of this investigation was to increase the throughput of high current implantation and study the impact on the supporting tool set, photostabilization and photoresist strip. In this paper, the effects of various pre-treatments on stripping of photoresist after high current implants are reported. The surface of positive photoresist can be carbonized (hardened) by the ion implantation process and cause residues and particles during ashing. In the case of high current implants typically used for source and drain formation, a hydrogen-depleted polymer layer is formed that requires advanced stripping methods for effective wafer cleaning. An advantage to effective photoresist removal is how the photoresist is cured prior to implantation. Patterned Novalakbased positive photoresist wafers were pre-treated prior to implant with hard bake and UV photostabilization in order to quantify the effects on subsequent ion implantation and ashing. Outgassing, uniformity, and particles were measured during As' and BFz' high current, high dose implants.The photoresist stripping process window was then investigated using a downstream plasma asher.
This paper addresses the fundamental aspects of etching semiconductors with inert gas beams in the presence of a suitable precursor gas. In particular, the changes that an energetic bombarding ion/neutral species cause to the surface and sub-surface region of a solid are considered, both in terms of the introduction of damage to the semiconductor and chemical processes that are provoked in the adsorbed states present. The implications for practical etching reactions are then discussed.
The form of ideal surface chemistry that is necessary for chemically assisted ion beam etching (CAIBE), with particular reference to in-situ processing is considered. Whilst to date CAIBE has been almost exclusively carried out with chlorine, distinct advantages exist if a compound that which displays spontaneous reactivity which is limited to one or two monolayers can be used. The role of alkyl halides in this scenario has been investigated through the use of surface spectroscopic probes to investigate the microscopic chemical and ion beam assisted reactivity that may be achieved. Dichloroethane has been found to display promising behaviour.
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