Thin films of pure WO3 and the binary systems of TiO2:WO3,MoO3:WO3,Cr2O3:WO3, and SnO2:WO3 were prepared by pulsed laser deposition method. The single and binary compounds were sintered at 1273K for five hours. The deposition were done under vacuum of 2x10-2 Torr at various substrates like glass and single crystal silicon wafer with negative conductance at ambient temperature thickness of ≍150 nm. The structures and morphology of pure WO3 and the binary systems TiO2:WO3,MoO3:WO3,Cr2O3:WO3, and SnO2:WO3 compounds and the deposited thin films were studied by X–ray diffraction and AFM atomic force microscope. The optical properties imply optical energy gap as well as optical constants for all the single and binary system were determined and discussed. The results of gas sensing measurements to NO2 gas showed that MoO3:WO3 sensors prepared on n- Si substrate showed maximum sensitivity (194.5%) at operating temperature 300K.
Bulk AlxSb1-x samples were prepared with different x ratios (0.1, 0.3, 0.5, 0.7 and 0.9) by quenching technique. This was done throughout mixing the aluminum and antimony elements according to the proper atomic weight and put them in an evacuated quartz ampoule which then sealed and heated at 1273 K for five hours and left to cool in air. Thin films of AlxSb1-xwere prepared by using thermal evaporation under vacuum of 10-5 mbar on glass substrates at room temperature with deposition rate (10-15nm/min) at thickness of ∼ 500nm. The structures of AlxSb1-x bulk and thin films have been studied by X–ray diffraction technique. The results showed that all alloys have polycrystalline structures and the peaks at composition ratio x = 0.3, 0.5 and 0.7 were identical with the AlSb standard peaks while at x = 0.1 and 0.9 the peaks are identical with Sb and Al respectively. The x-ray pattern of the prepared thin films are polycrystalline and the peaks identical with cubic structure also the peaks intensity decrease with the increase of aluminum ratio in the prepared thin films. AFM measurements showed the non-regular variation (increasing and decreasing) of both the average grain size and average surface roughness with the increasing of composition ratio. AlxSb1-x thin films showed high charge carrier concentration nH especially at x = 0.1 and 0.3 on the other side charge carrier concentration showed reduction with the increase of aluminum content whereas nH reach minimum value at x = 0.7 and then increases with further increase of aluminum content. The electrical conductivity of AlxSb1-x declare similar behavior where it reach minimum value at x = 0.5. From another side AlxSb1-x thin films show high conductivity resemble that of metallic material especially also at x = 0.1 and 0.3.
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