Compounds from ZnO doped with AgO in different ratio (0,3,5,7, and 9)wt.% were prepared.Thin films from the prepared compounds were deposited on a glass substrate using the pulsed laser deposition method. The XRD pattern confirmed the presence of a single-phase hexagonal wurtzite ZnO structure, without the presence of a secondary phase. AFM measurements showed an increase in both average grain size and average surface roughness with increasing concentration content of (AgO).The crystallite size of ZnO of the main peak corresponding to the preferred plane of crystal growth named (100) increases from 17.8 to 22.5nm by increasing of AgO doping ratio from 0 to 9%. The absorbance and transmittance in the wavelength range (350-1100 nm) were used to determine the optical properties. The results showed that the optical energy gap for direct allowed transition (r =0.5 )are (3.21, 3.2,3.15, 3.15, 2.95 ) Ev, respectively. The optical constants were also measured as a function of wavelength. This optical measurements showed the prepared thin film have many applications for solar cell fabrication and sensing devices.
Thin films samples of Bismuth sulfide Bi2S3 had deposited onglass substrate using thermal evaporation method by chemicalmethod under vacuum of 10-5 Toor. XRD and AFM were used tocheck the structure and morphology of the Bi2S3 thin films. Theresults showed that the films with law thickness <700 nm were freefrom any diffraction peaks refer to amorphous structure while filmswith thickness≥700 nm was polycrystalline. The roughness decreaseswhile average grain size increases with the increase of thickness. TheA.C conductivity as function of frequency had studied in thefrequency range (50 to 5x106 Hz). The dielectric constant,polarizability showed significant dependence upon the variation ofthickness.
PMMA films of different thickness (0.006, 0.0105, 0.0206, 0.0385 and 0.056cm) were synthesized by casting process. The temperature and frequency dependence of dielectric constant and AC electrical conductivity measurements at various frequencies (10kHz-10MHz) and temperatures (293-373K) were carried out. Few anomalies in dielectric studies were observed near 313 and 373 K respectively. These points were related to glass transitions temperature. The variation of activation energy and conduction behavior was studied .From the AC conduction studies, it is confirmed that the mechanism responsible for the conduction process is hopping of carriers. The variations of the dielectric constant and loss as function of frequency at different temperature was observed and the results were discussed. The calculated activation energy varied with the thickness, temperature, and applied frequency. Conductivity plots against frequency suggested that the response obeying the universal power law concerning the AC conductivity and dielectric behavior of polymer. The polarizability a increases with temperature but decreases with thickness indicating weekends and rising of intermolecular forces respectively.
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