In this study, four yttrium aluminum garnet single crystals co-doped with cerium and lithium were produced by the Czochralski method and the scintillation and defect properties were investigated. Our results demonstrated an increase in luminescence with Li co-doping as well as elimination of longer decay times. Surprisingly, although Li is monovalent, no oxidation of cerium from Ce3+ to Ce4+ was found as would be expected to maintain charge neutrality. Additionally, thermoluminescence results indicated a reduction in the trapping of charge carriers by shallow and deep traps, and room temperature photoluminescence measurements showed an improvement in the Ce3+ 5d to 4f transition efficiency.
Gallium oxide (Ga 2 O 3 ) is an emerging ultra-wide bandgap semiconductor that has unique properties ideal for high-power, high-temperature, optoelectronic, and sensing applications and has piqued interest over the last decade. It has the potential to be technologically and economically superior to commercially available wide bandgap semiconductor materials, such as silicon carbide and gallium nitride, because its wider bandgap enables increased breakdown voltages and lower on-state resistances, and its ability to be grown from melt enable costcompetitive economics. In this study, we present a techno-economic analysis that projects the cost of 6″ β-Ga 2 O 3 wafers fabricated from crystals grown via edge-defined film-fed growth (EFG). At a manufacturing volume of 5000 wafers per month, we predict a unit cost of $320 for a 6″ EFG grown β-Ga 2 O 3 epi-wafer. We determine that, when calculated using 2021 iridium crucible costs, EFG has a 2× cost advantage compared to previously reported epi-wafers grown via the Czochralski (CZ) method. We further identify key cost parameters for 6″ β-Ga 2 O 3 epi-wafers and present cost-sensitivity analysis of their impact on the final cost.
Single crystal cerium doped yttrium aluminum garnet boules were grown by the Czochralski method. Cerium concentrations were held at 1.0 at. % (with respect to yttrium in an on stoichiometric charge) but melt stoichiometry ranged from 10.0 at. % yttria rich to 10.0 at. % alumina rich in 5.0% increments. Photo-luminescence, lifetime, and scintillation data demonstrate a measureable decrease in UV defect emission as the melt becomes alumina rich. This is strongly consistent with a suppression of equilibrium YAl3+ antisite defect concentrations in the boule as melt stoichiometry shifts towards alumina rich. This decrease does not alter thermoluminescence behavior, making the case that carrier traps and YAl3+ antisites are independent defects. Additionally, an aluminum in-diffusion post growth treatment indicates the observed change is from reduction of YAl3+ antisite defect concentrations alone, as opposed to alteration of antisite-vacancy complexes. The results culminate in a large increase in visible emission and produce an excellent resolution of 5.04 ± 0.07% (662 keV; 10 mm thick) with electronic noise subtraction on a photodiode.
Beta-phase gallium oxide (β-Ga2O3) has attracted attention in recent years as a potentially low cost, large area substrate and active layer material for high power, high temperature power electronics and sensing devices. However, growth of β-Ga2O3 crystals is complicated by easily activated (100) and (001) cleavage planes, the presence of low angle grain boundaries (LAGBs) and twins, and the potential formation of polycrystalline grains. In this study, β-Ga2O3 crystals were grown by the edge-defined film-fed growth technique with an (010) principal face. Two crystals with apparently randomly formed high angle grain boundaries (HAGBs) were selected and analyzed by electron backscatter diffraction, electron channeling contrast imaging, and cathodoluminescence to investigate the nature of the LAGBs and the source of the HAGB formation. It was discovered that planar LAGBs lying parallel to the (010) plane exist in the region immediately preceding the start of an HAGB. Increased misorientation across the LAGB was observed, approaching the initiation of a new grain. We present multimodal microscopy characterization, correlating misorientation and variation in optoelectronic properties with LAGBs and the associated dislocations.
Sapphire's hardness, strength, and UV-IR transmittance make it an excellent candidate for IR window and transparent armor applications. At Saint-Gobain Crystals, Edge-defined Film-fed Growth (EFG) sapphire crystals are currently being manufactured for IR window and transparent armor applications in sizes up to 305x510x11 mm. However, the demand for even larger sapphire panels continues to increase. In order to aid in the development of larger pieces, a nondestructive measurement has been developed to map planar stress in Clear Large Area Sapphire Sheet (CLASS). The measurement works by utilizing optical excitation of trace amounts of Cr 3+ impurities. The resulting luminescence produces a sharp emission doublet whose exact wavelength is dependent on spacing between Cr 3+ and O 2-ions in sapphire, and therefore the strain in the sample. By recording several data points over an array, it is possible to construct a stress map of large sapphire sheets and gain valuable information on the growth conditions of the sapphire ribbon.
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