2012
DOI: 10.1016/j.jcrysgro.2012.03.009
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Single crystal Ce doped scintillator material with garnet structure sensitive to gamma ray and neutron radiation

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Cited by 8 publications
(1 citation statement)
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“…The incorporation of Gd in the composition of multi-cationic garnets for brighter scintillation is preferable due to the capability of the Gd sublattice in the crystal to be a reservoir for Frenkel-type excitons, providing further electronic excitation transfer to luminescence centers, as evidenced by photoluminescence and scintillation measurements [6]. The effect of the Ga/Al ratio on the luminescence decay rate and other scintillation properties has been studied in single crystals of Gd 1 Y 2 Al 5−x Ga x O 12 :Ce, Gd 2 Y 1 Al 5−x Ga x O 12 :Ce, and Mg-co-doped Gd 3−y Y y Al 5−x Ga x O 12 :Ce (GYAGG) grown by the micro-pulling down technique and in a ceramics form [7][8][9][10][11][12][13]. Disorder in the distribution of Al and Ga ions in oxygen-coordinated tetrahedra and octahedra ensures a possibility for engineering the bandgap and the crystal field strength acting on the activator ion and creating a diversity of sites for Ce activator localization in the matrix host [14].…”
Section: Introductionmentioning
confidence: 99%
“…The incorporation of Gd in the composition of multi-cationic garnets for brighter scintillation is preferable due to the capability of the Gd sublattice in the crystal to be a reservoir for Frenkel-type excitons, providing further electronic excitation transfer to luminescence centers, as evidenced by photoluminescence and scintillation measurements [6]. The effect of the Ga/Al ratio on the luminescence decay rate and other scintillation properties has been studied in single crystals of Gd 1 Y 2 Al 5−x Ga x O 12 :Ce, Gd 2 Y 1 Al 5−x Ga x O 12 :Ce, and Mg-co-doped Gd 3−y Y y Al 5−x Ga x O 12 :Ce (GYAGG) grown by the micro-pulling down technique and in a ceramics form [7][8][9][10][11][12][13]. Disorder in the distribution of Al and Ga ions in oxygen-coordinated tetrahedra and octahedra ensures a possibility for engineering the bandgap and the crystal field strength acting on the activator ion and creating a diversity of sites for Ce activator localization in the matrix host [14].…”
Section: Introductionmentioning
confidence: 99%