The burst of the reactive oxygen species (ROS) is the culprit of myocardial ischemia-reperfusion injury. As direct ROS scavengers, antioxidants are clinically documented drugs for the prevention of reperfusion injury. However, some drugs give disappointing therapeutic performance despite their good in vitro effects. Therefore, in vivo assessments are necessary to screen the antioxidants before clinical trials. However, traditional methods such as histological study require invasive and complicated preprocessing of the biological samples, which may fail to reflect the actual level of the unstable ROS with a very short lifetime. Peroxynitrite (ONOO − ) is a characteristic endogenous ROS produced during reperfusion. Here, we modified the ONOO − -responsive near-infrared fluorescent probe on a myocardium-targeting silica cross-linked micelle to prepare a nanoprobe for the real-time monitoring of ONOO − during coronary reperfusion. A ROS-stable cyanine dye was co-labeled as an internal reference to achieve ratiometric sensing. The nanoprobe can passively target the infarcted myocardium and monitor the generation of ONOO − during reperfusion in real-time. The antioxidants, carvedilol, atorvastatin, and resveratrol, were used as model drugs to demonstrate the capability of the nanoprobe to evaluate the antioxidative potency in situ. The drugs were either loaded and delivered by the nanoprobe to compare their in vivo efficacy under similar concentrations or administered intraperitoneally as a free drug to take their pharmacokinetics into account. The imaging results revealed that pharmacokinetics might be the determinant factor that influences the efficacy of the antioxidants.
We measured the stability of small-sized trench devices with different specifications under negative bias. The degradation behavior of the electrical characteristics of the device caused by the channel size was analyzed. It was found that the passivation caused by the increase of the channel width was not completely generated by charge trapping in the passivation layer and the interface between the passivation layer and the active layer. The parasitic effect related to the channel length and the drain-induced barrier lowering effect together affect the electrical stability of the device. This shows that with the development of small-sized TFT devices, the influence of size on the device begins to appear. As such the size factor must be considered when designing the device. For the instability caused by these devices themselves, post-processing can be used to improve the stability.
In recent years, research based on HfO2 as a charge trap memory has become increasingly popular. This material, with its advantages of moderate dielectric constant, good interface thermal stability and high charge trap density, is currently gaining in prominence in the next generation of nonvolatile memory devices. In this study, memory devices based on a-IGZO thin-film transistor (TFT) with HfO2/Al2O3/HfO2 charge trap layer (CTL) were fabricated using atomic layer deposition. The effect of the Al2O3 layer thickness (1, 2, and 3 nm) in the CTL on memory performance was studied. The results show that the device with a 2-nm Al2O3 layer in the CTL has a 2.47 V memory window for 12 V programming voltage. The use of the HfO2/Al2O3/HfO2 structure as a CTL lowered the concentration of electrons near the tunnel layer and the loss of trapped electrons. At room temperature, the memory window is expected to decrease by 0.61 V after 10 years. The large storage window (2.47 V) and good charge retention (75.6% in 10 years) of the device under low-voltage conditions are highly advantageous. The charge retention of the HfO2/Al2O3/HfO2 trap layer affords a feasible method for fabricating memory devices based on a-IGZO TFT.
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