Low operational lifetime is a critical issue in perovskite light-emitting diodes. The forward-bias currents for light emission accelerate device degradation, which needs to be identified and understood to be able to improve the device stability. Here, we systematically analyze the degradation mechanism of perovskite lightemitting diodes (PeLEDs) fabricated with a sequential deposition method that produce a compact and pinhole-free perovskite film. The device exhibits an efficient green electroluminescence (peak wavelength at 533 nm and full width at half-maximum of 22 nm) with a maximum luminance of more than 67 000 cd/m 2 . The lifetime, however, is quite short; under the constant current bias for an initial luminance of 1000 cd/ m 2 , the decay time to reach half of the initial luminance is approximately 13 min. Dark spots are created and enlarged as a result of perovskite film deterioration and ion migration. By investigating morphological changes in the perovskite films and the amount of ion accumulation under the Al electrode for the unoperated, T 50 (luminance decay to 50% of the initial value), and T 10 (luminance decay to 10% of the initial value) devices, we propose a degradation mechanism for PeLEDs. The ion migration from the perovskite layer experienced electrochemical interactions with the Al electrode, causing device degradation.

Inkjet printing of colloidal quantum dots (QDs) is considered a promising technology for application in full‐color quantum dot light‐emitting diode (QLED) displays. However, QLEDs that are inkjet printed in a pixel‐defining bank structure generally exhibit a low performance, mainly due to the nonuniformity in its QD morphology. In this study, an enhanced performance of inkjet‐printing‐based pixelated QLEDs is achieved by introducing small amounts of poly(methyl methacrylate) (PMMA) of different molecular weights into QD inks. When this QD–PMMA composite ink is adopted, uniform droplets are formed, originating from contact line depinning during drying. Inside the bank structure, the inkjet‐printed QD–PMMA composite film shows a smooth surface and little pileup at the bank edges. A pixelated QLED with PMMA with a molecular weight of 8 kDa exhibits the highest luminance of 73 360 cd m−2 and an external quantum efficiency of 2.8%, which are remarkably higher than that of the inkjet‐printed QLED subpixels without PMMA. The result is verified through the observation of the drying process and the QLED subpixel shapes under operation. Thus, inkjet‐printed QD–PMMA composite inks can be a promising strategy for future research on pixelated QLEDs for the fabrication process of full‐color QLED displays.

We have investigated the possibility of fabricating quantum dot light‐emitting diodes (QLEDs) using inkjet printing technology, which is the most attractive method for the full‐color patterning of QLED displays. By controlling the quantum dot (QD) ink formulation and inkjet printing condition, we successfully patterned QLED pixels in the 60‐in ultrahigh definition TV format, which has a resolution of 73 pixels per inch. The inkjet‐printed QLEDs exhibited a maximum luminance of 2500 cd/m2. Although the performance of inkjet‐printed QLEDs is low compared with that of QLEDs fabricated using the spin‐coating process, our results clearly indicate that the inkjet printing technology is suitable for patterning QD emissive layers to realize high‐resolution, full‐color QLED displays.

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Colloidal semiconductor nanocrystals, referred to as quantum dots (QDs), have unique and superb photophysical properties, promising a variety of applications ranging from optoelectronics and energy harvesting to agriculture. The last decade witnessed a tremendous advance in QDs and their successful debut in displays, and now, QDs are equipped with environmental benignity to expand their territory to everyday life. From this perspective, the current research status and future perspective of environmentally benign QDs as building blocks for light-generating and light-harvesting applications are provided. Also provided is an overview of the progress made in the chemistry (colloidal synthesis, surface chemistry, and heterostructuring) and in their photophysical and electrical properties from the viewpoint of their use in light-emitting or light-harvesting applications. Grounded on the current status of heavy-metal-free QDs compared with cutting-edge technologies, the perspective of environmentally benign QDs for practical use and future research directions is discussed.

We demonstrated a bank structure for inkjet-printed quantum dot light-emitting diodes (QLEDs) fabricated through photolithography process using black photoresist (B-PR). The B-PR banks have low surface energy (13 mJ m -2 ), resulting in well confined quantum dot (QD) ink inside the pixel area. Based on the B-PR bank structure, we demonstrated a QLED with 0.20 % of external quantum efficiency.

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We have investigated the formation of pixelated red inkjetprinted QDs film in high resolution pixels. We targeted the 60 inch sized 4K UHD format of 73 pixel per inch (ppi), which is 3840 pixels width and 2160 pixels tall. By controlling proper solvent ratio of toluene and 1,2-dichlorobenzene (DCB), we found feasibility to fabricate inkjet-printed QDs film of high resolution and reduce coffee ring effect of inkjet-printed QDs film.