We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm2/Vs and current on/off ratio on the order of ~104 were obtained for bilayer MoS2. The mobility increased up to ~173–181 cm2/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film.

In this article, we report layer-controlled, continuous and large-area molydenum sulfide (MoS2) growth onto a SiO2/Si substrate by RF sputtering combined with sulfurization. A two-step process was employed to synthesize MoS2 films. In the first step, an atomically thin MoO3 film was deposited by RF magnetron sputtering at 300 °C. Subsequently, the as-sputtered MoO3 film was further subjected to post-annealing and sulfurization processes at 650 °C for 1 hour. It was observed that the number of layers of MoS2 can be controlled by adjusting the sputtering time. The fabricated MoS2 transistors exhibited high mobility values of ∼21 cm(2) V(-1) s(-1) (bilayer) and ∼25 cm(2) V(-1) s(-1) (trilayer), on/off ratios in the range of ∼10(7) (bilayer) and 10(4)-10(5) (trilayer), respectively. We believe that our proposed paradigm can start a new method for the growth of MoS2 in future electronics and optoelectronics applications.

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Text-to-SQL is the problem of converting a user question into an SQL query, when the question and database are given. In this paper, we present a neural network approach called RYANSQL (Recursively Yielding Annotation Network for SQL) to solve complex Text-to-SQL tasks for cross-domain databases. Statement Position Code (SPC) is defined to transform a nested SQL query into a set of non-nested SELECT statements; a sketch-based slot filling approach is proposed to synthesize each SELECT statement for its corresponding SPC. Additionally, two input manipulation methods are presented to improve generation performance further. RYANSQL achieved competitive result of 58.2% accuracy on the challenging Spider benchmark. At the time of paper submission (April 2020), RYANSQL v2, a variant of original RYANSQL, is positioned at 3rd place among all systems and 1st place among the systems not using database content with 60.6% exact matching accuracy. The source code is available at https://github.com/kakaoenterprise/RYANSQL.

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Chondroitin sulfate (CS) is a glycosaminoglycan, which is composed of an alternating sequence of sulfated and/or unsulfated residue of D-glucuronic acid (GlcA) and D-N-acetylgalactosamine (GalNAc) linked by b(1→3) and b(1→4) bonds.1) CS is a major class of glycosaminoglycans required for the formation of proteoglycans found in the joint cartilage. It has been well established that basic damage to the arthritic cartilage involves the alteration of proteoglycans and collagen fibers.