AIP patients seem to have a higher risk of UC compared with the general population. The increased IgG4-positive cellular infiltration in the colonic tissue suggests that UC may be an extrapancreatic manifestation of AIP.

AIMTo investigate the temporal trends in the misdiagnosis rate between Crohn’s disease (CD) and intestinal tuberculosis (ITB) in South Korea.METHODSWe retrospectively reviewed the medical records of patients managed for CD or ITB at Asan Medical Center, a tertiary referral hospital, Seoul, Korea between 1996 and 2014. The temporal trends in the misdiagnosis rates between the two diseases were analyzed. The demographic and clinical characteristics were compared between CD patients who were initially misdiagnosed as ITB (final CD group) and vice versa (final ITB group). Final diagnostic criteria for ITB and medication for CD before definite diagnosis of TB were also analyzed in final ITB group.RESULTSIn total, 2760 patients were managed for CD and 772 patients for ITB between 1996 and 2014. As well, 494 of the 2760 CD patients (17.9%) were initially misdiagnosed as ITB and 83 of the 772 ITB patients (10.8%) as CD. The temporal trend in misdiagnosing CD as ITB showed a decrease (OR = 0.89, 95%CI: 0.87-0.91, P < 0.001), whereas the temporal trend in misdiagnosing ITB as CD showed an increase (OR = 1.06, 95%CI: 1.01-1.11, P = 0.013). Age at diagnosis, presenting symptoms, and proportion of patients with active/past perianal fistula and active/inactive pulmonary tuberculosis (TB) were significantly different between final CD group and final ITB group. Forty patients (48.2%) in final ITB group were diagnosed by favorable response to empirical anti-TB treatment. Seventeen patients (20.5%) in final ITB group had inappropriately received corticosteroids and/or thiopurines due to misdiagnosis as CD. However, there were no mortalities in both groups.CONCLUSIONCases of CD misdiagnosed as ITB have been decreasing, whereas cases of ITB misdiagnosed as CD have been increasing over the past two decades.

On an SiO2-patterned c-plane sapphire substrate, GaN domains were grown with their polarity controlled in accordance with the pattern. While N-polar GaN was grown on hexagonally arranged circular openings, Ga-polar GaN was laterally overgrown on mask regions due to polarity inversion occurring at the boundary of the circular openings. After etching of N-polar GaN on the circular openings by H3PO4, this template was coated with 40-nm Si by sputtering and was slightly etched by KOH. After slight etching, a thin layer of Si left on the circular openings of sapphire,but not on GaN, was oxidized during thermal annealing and served as a dielectric mask during subsequent regrowth. Thus, the subsequent growth of GaN was made only on the existing Ga-polar GaN domains, not on the circular openings of the sapphire substrate. Transmission electron microscopy analysis revealed no sign of threading dislocations in this film. This approach may help fabricating an unholed and merged GaN film physically attached to but epitaxially separated from the SiO2-patterned sapphire.

Liquefied Natural Gas (LNG) contains a significant amount of cold exergy, which is normally wasted during regasification at the receiving terminals. In recent years, organic Rankine cycles (ORCs) are proposed to exploit the LNG cold energy. This paper addresses the working fluid screening for an ORC utilizing LNG cold energy. Due to the cryogenic temperature of LNG, the condensation temperature of an ORC should be far below the ambient temperature, and the working fluid should be totally different from that for conventional ORCs operating above the ambient temperature. However, the working fluids also depend on the cycle configuration and the natural gas target pressure.In this study, 22 working fluids are investigated. A simulation-based optimization framework is proposed to compare the performance of all the candidates. The Particle Swarm Optimization (PSO) algorithm is adopted to optimize 5 and 7 dimensional search spaces for the combined systems operated across and below the ambient temperature.Promising working fluids for ORCs operated across and below the ambient temperature considering the effect of LNG target pressures are suggested based on the simulationbased optimization results. The most energy efficient working fluids are R125, R143a, R290 and R1270 for ORCs operated below the ambient temperature without waste heat utilization. For ORCs operated across the ambient temperature utilizing flue gas waste heat from a natural gas fired power plant, R170, R134a and R290 perform better than other working fluids.

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A new Fabry-Pérot cavity antenna simultaneously producing a highgain and a wide beamwidth is proposed. To get increased antenna gain and reduced back radiation, all the openings of the antenna are enclosed with metallic walls, and to obtain a broader beamwidth, the antenna has been fabricated in a rectangular shape, with an aspect ratio of about 3.5:1. In addition we propose a new method to more accurately predict the frequency of the maximum gain by considering a resonance mode of the cavity enclosed by metallic walls. Good agreement between the prediction and measurement results ensures the validity of the new design approach to provide easy control of gain and beamwidth at the same time.

Controllable growth and facile transferability of a crystalline film with desired characteristics, acquired by tuning composition and crystallographic orientation, become highly demanded for advanced flexible devices. Here the desired crystallographic orientations and facile transferability of a crystalline film can be achieved by “thru‐hole epitaxy” in a straightforward and undemanding manner with no limitation on the layer number and polarity of a 2D space layer and the surface characteristics. The crystallographic alignment can be established by the connectedness of the grown material to the substrate through a small net cross‐sectional area of thru‐holes, which also allows the straightforward detachment of the grown material. Thru‐hole epitaxy can be adopted for the realization of advanced flexible devices on large scale with desired crystallographic orientation and facile transferability.

HCl-vapor etching can provide another degree of freedom in polarity-sensitive etching because TD-free N-polar GaN is inert to HCl vapor.