We developed titanium nitride (TiN) based nanoelectromechanical (NEM) switch with the smallest suspension air-gap thickness ever made to date by a “top-down” complementary metal-oxide semiconductor fabrication methods. Cantilever-type NEM switch with a 15-nm-thick suspension air gap and a 35-nm-thick TiN beam was successfully fabricated and characterized. The fabricated cantilever-type NEM switch showed an essentially zero off current, an abrupt switching with less than 3mV/decade, and an on/off current ratio exceeding 105 in air ambient. Also achieved was an endurance of over several hundreds of switching cycles under dc and ac biases in air ambient.
It is revealed that the interface trap generation rate increases by Fowler-Nordheim current stressing on the tunnel oxide as the channel width of shallow-trench isolation (STI)-isolated NAND flash cells shrinks. Furthermore, we argue that the interface trap annihilation phenomenon during retention mode becomes a major failure mechanism of the data retention characteristics of sub-100-nm cells in addition to the conventional charge loss mechanism. A new interface trap analysis method using the hysteresis of the -curve is proposed and shows that the interface traps consist of fast traps and slow traps.
Previously, well controlled silicon nanowires with different dNw's have been successfully demonstrated with Nanowire size (dNw) dependency of various electrical SONOS memory using subtle TSNWFET process [3]. In characteristics on gate all around Twin Silicon Nanowire this article, we will further investigate dNw dependency of MOSFET (TSNWFET) is investigated to understand overall intrinsic electrical characteristics of TSNWFET fabricated performance of nanowire transistor deeply. When dNw by previously matured process. decreases, current drivability (ION) normalized by
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