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International audienceThis letter demonstrates a new technique to extract the source/drain series resistance of MOSFETs. Unlike the well-known total resistance techniques, R sd is extracted in a way that the result is insensitive to effective length and mobility variations. The technique has been successfully applied to 45-nm bulk and fully depleted SOI MOSFETs with high-¿ and metal gate, having channel length down to 22 nm. The technique provides a high accuracy and allows fast measurements and statistical analysis

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