The electrochemical etching of silicon in electrolytes is proposed as a method for realising of three-demensional sensor and actuator elements. Preparation and properties of porous silicon layer (PSL) were investigated. Silicon single crystal was converted into PSL by anodization in the solution of hydrofluoric acid and etanol with deferent concentrations. He-Ne laser was used for the stimulation of electrochemical reaction on n-type silicon. As a resultes of photoelectrochemical reactions many micropores are formed inside of PSL and zig-zag in the thickness direction. This porosity structure has high chemical activity and changes at the time. The composition of PSL was investigated by methods of secondary emission mass spectroscopy and infrared Furie spectroscopy.
We report the Y-Ba-Cu--O infrared (IR) transmittance, electron paramagnetic resonance (EPR) spectra and X-ray diffraction pattern evolution through sample's transition from oxygen disordered tetragonal 06 to orthorhombic 06 8 phase. The transmittance spectrum of the sample prepared by conventional technique and quenched in liquid nitrogen is considerably distorted by lattice defects. After 478
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