Investigation of time stability porous silicon layer

Abstract

The electrochemical etching of silicon in electrolytes is proposed as a method for realising of three-demensional sensor and actuator elements. Preparation and properties of porous silicon layer (PSL) were investigated. Silicon single crystal was converted into PSL by anodization in the solution of hydrofluoric acid and etanol with deferent concentrations. He-Ne laser was used for the stimulation of electrochemical reaction on n-type silicon. As a resultes of photoelectrochemical reactions many micropores are formed inside of PSL and zig-zag in the thickness direction. This porosity structure has high chemical activity and changes at the time. The composition of PSL was investigated by methods of secondary emission mass spectroscopy and infrared Furie spectroscopy.