This work presents alpha and neutron SER characterizations of a 28nm commercial Fully-Depleted SOI technology predisposed to consumer applications. Its intrinsic SER hardness is as well compared to known highly reliable Partially-Depleted SOI technologies.
We address accurate computation of on-orbit upset rates in advanced technologies, with a focus on FD-SOI at the 28 nm node. Heavy-ion measurements performed on FD-SOI SRAM bit-cells give experimental evidence of the technology's intrinsic robustness in space environments; this extreme reduction of sensitive volume dimensions deeply affects the assumptions pertaining to the radiation response models used to predict upset rates. The generic "Integral Rectangular ParallelePiped" (IRPP) model, although requiring careful setting of its parameters, provides us with first-order estimates of the error rate. We then present a custom FD-SOI response model within our Monte-Carlo simulation chain, enabling comparison with IRPP and further analyses.
We report on soft error rate measurements on 28 nm commercial FDSOI SRAM bitcells under alpha irradiation. The technology proves to be experimentally quasi-immune to alpha particles. Simulation results are also presented, through 3D-TCAD investigations of the transport mechanisms followed by Monte-Carlo simulations of the charge deposition.
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