This paper describes the design of a (4-kV, 4.16-MVA) three-level neutral-point-clamped-, three-level flyingcapacitor-, four-level flying-capacitor-, and nine-level seriesconnected H-bridge voltage-source converter on the basis of state-of-the-art 6.5-, 4.5-, 3.3-and 1.7-kV insulated gate bipolar transistors. The semiconductor loss distribution and the design of semiconductors and passive components are compared for a medium switching frequency assuming a constant converter efficiency of about 99%. To evaluate the converter characteristics in high switching frequency applications, a second comparison is realized for the maximum switching frequencies assuming a constant expense of semiconductors in all converters.Index Terms-Medium-voltage drives (MVDs), multilevel converters, power electronics.
This paper describes the design of a (2.3kV, 2.4MVA) Two-Level -, Three-Level -Neutral Point Clamped -, Three-Level -Flying Capacitor -and Four-Level -Flying Capacitor -Voltage Source Converter on the basis of state-of-theart 6.5kV, 3.3kV and 2.5kV IGBTs. The semiconductor loss distribution, design, and costs of semiconductors and passive components are compared for a constant converter efficiency of 99%. Assuming a constant installed switch power the converters are also compared at the maximum switching frequency of each converter resulting in the minimum expense of passive components.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.