We use the two-dimensional (2-D) scattering matrix method (SMM) to analyze the slot characteristics in slotted singlemode semiconductor lasers and compare the results with those calculated by the one-dimensional transfer matrix method (TMM). The analysis shows that the 2-D SMM is required to accurately account for the measured results. Using the 2-D SMM simulation, we find that there is almost no reflection at the interface from slot to waveguide while a large reflection exists at the interface from waveguide to slot, and the power loss is much larger than the power reflected. For a single slot, the slot width has little influence on the slot reflectivity, which coincides with the measured results. The reflection and transmission of the slot are found to be exponentially dependent on the slot depth.Index Terms-Perfectly matched absorption layers (PMLs), scattering matrix method, semiconductor lasers, single-mode laser, transfer matrix method.
A discrete-mode laser diode fabricated in the InGaAs/InP multiple quantum-well system and emitting single mode at λ = 2 μm is reported. The laser had an ex-facet output power >5 mW at 25°C and the laser operated mode-hop free in the temperature range −5°C-55°C.Index Terms-Mid-infrared sources, semiconductor laser, single-mode laser, strained quantum-well.
Abstract-A sequence of partially reflective slots etched into an active ridge waveguide of a 1.5 µm laser structure is found to provide sufficient reflection for lasing. Mirrors based on these reflectors have strong spectral dependence. Two such active mirrors together with an active central section are combined in a Vernier configuration to demonstrate a tunable laser exhibiting 11 discrete modes over a 30 nm tuning range with mode spacing around 400 GHz and side-mode suppression ratio larger than 30 dB. The individual modes can be continuously tuned by up to 1.1 nm by carrier injection and by over 2 nm using thermal effects. These mirrors are suitable as a platform for integration of other optical functions with the laser. This is demonstrated by monolithically integrating a semiconductor optical amplifier with the laser resulting in a maximum channel power of 14.2 dBm from the discrete modes.
An all-optical switching mechanism via optical injection of an InAs/GaAs quantum dot laser is presented. Relative state suppression in excess of 40 dB is achieved, and experimental switching times of the order of a few hundred picoseconds are demonstrated.
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