Analysis of Slot Characteristics in Slotted Single-Mode Semiconductor Lasers Using the 2-D Scattering Matrix Method

Lu, Qiaoyin; Guo, Weihua; Phelan, Richard; Byrne, Diarmuid; Donegan, John F.; Lambkin, P.; Corbett, Brian

doi:10.1109/lpt.2006.887328

Cited by 81 publications

(39 citation statements)

References 8 publications

(18 reference statements)

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“…The system's threshold behavior and linewidth are retrieved in 2 steps. Initially the scattering matrix method (SMM) is utilized in order to solve for the reflection coefficient due to the given slot width (ds), depth, and periodic spacing (dp) as previously described in references [2,3]. This research focuses specifically on the ef- fects of slot depth with the width and period initially optimized to excite a Bragg wavelength of 1550 nm.…”

Section: Device and Theoretical Methodsmentioning

confidence: 99%

“…The slotted laser presented incorporates the selectivity of a periodic Bragg grating implemented throughout the active region, however on only one side of the cavity. It has been shown to be robust in regards to slot position and size thus allowing its fabrication to be done with more conventional photolithography and avoiding complex regrowth techniques generally required for traditional DFB lasers [2]. In additon, the slots could be optimized so that cleaved facets are no longer necessary at both ends of the cavity allowing integration with optical devices [3].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Linewidth and threshold calculations for a slotted, Fabry-Perot semiconductor laser

Bello

Abdullaev

et al. 2013

2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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Section: Device and Theoretical Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Linewidth and threshold calculations for a slotted, Fabry-Perot semiconductor laser

Bello

Abdullaev

et al. 2013

2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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“…Fig. 2(b) shows how the calculated reflection and transmission from a single slot changes with the etch depth [15]. A longitudinal cross section of a single slot simplified is schematically shown in Fig.…”

Section: Tunable Laser Designmentioning

confidence: 99%

Discretely Tunable Semiconductor Lasers Suitable for Photonic Integration

Byrne¹,

Engelstaedter

Guo³

et al. 2009

IEEE J. Select. Topics Quantum Electron.

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Abstract-A sequence of partially reflective slots etched into an active ridge waveguide of a 1.5 µm laser structure is found to provide sufficient reflection for lasing. Mirrors based on these reflectors have strong spectral dependence. Two such active mirrors together with an active central section are combined in a Vernier configuration to demonstrate a tunable laser exhibiting 11 discrete modes over a 30 nm tuning range with mode spacing around 400 GHz and side-mode suppression ratio larger than 30 dB. The individual modes can be continuously tuned by up to 1.1 nm by carrier injection and by over 2 nm using thermal effects. These mirrors are suitable as a platform for integration of other optical functions with the laser. This is demonstrated by monolithically integrating a semiconductor optical amplifier with the laser resulting in a maximum channel power of 14.2 dBm from the discrete modes.

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“…In our case, these features are slotted regions etched into the ridge waveguide of the device. We assume that the index step, ∆n, associated with the etched features is a real quantity, although some scattering losses are inevitably introduced that strongly depend on the depth of the slotted region [12]. The threshold gain, γ m , can then be expressed at first order in the index-step as γ m = γ…”

mentioning

confidence: 99%

Passive harmonic mode locking by mode selection in Fabry–Perot diode lasers with patterned effective index

2010

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We demonstrate passive harmonic mode-locking of a quantum well laser diode designed to support a discrete comb of Fabry-Perot modes. Spectral filtering of the mode spectrum was achieved using a non-periodic patterning of the cavity effective index. By selecting six modes spaced at twice the fundamental mode spacing, near-transform limited pulsed output with 2 ps pulse duration was obtained at a repetition rate of 100 GHz.The generation of high power, ultrashort optical pulses using mode-locked diode lasers is of considerable importance across a range of applications in optical communication systems and data processing [1,2]. In recent years, the wide gain bandwidth of certain self-assembled gain materials has enabled sub-picosecond and femtosecond pulsewidths to be obtained [3][4][5]. In parallel, various techniques such as colliding pulse mode-locking (CPML) and harmonic mode-locking have been adapted for diode lasers that allow higher repetition rates to be achieved while avoiding the lower average power associated with short device lengths [1].CPML places the saturable absorber section at the center of the cavity. Two counterpropagating pulses are formed and collide at the center. In this way the saturation of the absorption is enhanced and the repetition rate is simultaneously doubled from the fundamental [6]. Harmonic mode-locking of diode lasers can be achieved by forcing the device to lock on a set of equally spaced but non-adjacent cavity modes. With this approach, terahertz (THz) repetition rates have been achieved in devices that incorporate distributed Bragg reflector mirrors [7] and intra-cavity reflectors [8]. A limitation of these approaches to harmonic mode-locking however is the fact that only the harmonic frequency rather than the precise form of the mode-locked spectrum itself can be specified.In this letter we demonstrate an approach to passive mode-locking of diode lasers based on the selection of individual modes from the spectrum of Fabry-Perot resonances. Mode selection is achieved by a distributed reflection mechanism that is designed as a perturbation of the Fabry-Perot mode spectrum. Such an approach has some features in common with that described in [8], although, in our case the effective index profile along the device is derived directly from an inverse problem solution. This approach has allowed us to design singlemode [9], and two-mode Fabry-Perot diode lasers [10] with high spectral purity and can in principle provide a much greater degree of control of the mode-locked spectrum of the laser. To demonstrate passive mode-locking of a discrete comb of Fabry-Perot modes, a saturable absorber section is placed adjacent to one of the cavity mirrors. In the device we consider here, six primary modes are chosen with a spacing of two fundamental modes leading to mode-locking at the first harmonic of the cavity.We have shown that a set of self-consistent equations for the lasing modes can be found by making an expansion about the cavity resonance condition in a FabryPerot laser [11]. The ef...

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Analysis of Slot Characteristics in Slotted Single-Mode Semiconductor Lasers Using the 2-D Scattering Matrix Method

Cited by 81 publications

References 8 publications

Linewidth and threshold calculations for a slotted, Fabry-Perot semiconductor laser

Linewidth and threshold calculations for a slotted, Fabry-Perot semiconductor laser

Discretely Tunable Semiconductor Lasers Suitable for Photonic Integration

Passive harmonic mode locking by mode selection in Fabry–Perot diode lasers with patterned effective index

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