2014
DOI: 10.1364/ol.39.004607
|View full text |Cite
|
Sign up to set email alerts
|

All-optical switching with a dual-state, single-section quantum dot laser via optical injection

Abstract: An all-optical switching mechanism via optical injection of an InAs/GaAs quantum dot laser is presented. Relative state suppression in excess of 40 dB is achieved, and experimental switching times of the order of a few hundred picoseconds are demonstrated.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

2
19
0

Year Published

2016
2016
2024
2024

Publication Types

Select...
7
2

Relationship

2
7

Authors

Journals

citations
Cited by 35 publications
(21 citation statements)
references
References 21 publications
2
19
0
Order By: Relevance
“…There are relatively few existing experimental studies in which one must take into account both the GS and the ES. One example relevant to the work in this Letter is the study of ultrafast switching between the GS and ES induced by injection into the GS when the freerunning operation is ES lasing only [10]. Switching between the GS and the ES has also been reported for the feedback configuration [11] and for two-section passively mode-locked devices via current and voltage variations [12].…”
mentioning
confidence: 90%
“…There are relatively few existing experimental studies in which one must take into account both the GS and the ES. One example relevant to the work in this Letter is the study of ultrafast switching between the GS and ES induced by injection into the GS when the freerunning operation is ES lasing only [10]. Switching between the GS and the ES has also been reported for the feedback configuration [11] and for two-section passively mode-locked devices via current and voltage variations [12].…”
mentioning
confidence: 90%
“…Experimentally, the studied slave laser (SL) was a 0.6 mm long InAs QD laser similar to that used in 6 and lased either at the GS (around 1300 nm) or simultaneously at the GS and ES (around 1215 nm) or solely at the ES. The threshold currents of the laser were 34 mA for GS lasing and 60 mA for simultaneous GS and ES lasing at room temperature.…”
Section: Free Running Qd Lasermentioning
confidence: 99%
“…Three modes of operation -GS, GS+ES, ES -for the output are typical for short cavity QD lasers with increasing pump current and their study has previously attracted significant attention. [6][7][8][9][10][11] The emission from the GS was strictly from a single (longitudinal) mode which we label the preferential mode. The emission from the ES was multimode with about 10 nm spectral width.…”
Section: Free Running Qd Lasermentioning
confidence: 99%
“…Lasers and, in particular, semiconductor lasers are well known for having rich and complex dynamical behaviour intrinsically linked to exciting physical features and with the potential to lead to cutting-edge applications [1][2][3]. While one of the main practical interests at first was to understand how to avoid instabilities -which, by the way, still remain a significant issue nowadays [4][5][6]-the field has largely outgrown this initial problem to tackle a wide variety of topics: from application of optical chaos-chaos communication, random number generation or random key distribution [3]-to all-optical processing, high-frequency signal generation, RF over fiber or LIDAR systems [7][8][9][10]. These topics of research are also indirectly supported by the impressive growth of both the fields of microwave photonics [7,11] and photonic integration [12].…”
Section: Introductionmentioning
confidence: 99%