Thermal admittance spectroscopy (TAS) is frequently used to analyze the properties of trap states in semiconductor devices. We perform detailed simulations in combination with experiments to understand the effect of low carrier mobility on the analysis of trap states by TAS. We show that the apparent characteristic peak in the differential capacitance spectra is strongly dominated by the dielectric relaxation (DR) peak caused by low carrier mobilities for the case of shallow traps and low trap densities. The model for the DR dominated case is successfully applied to interpret the experimental results from poly(3-hexylthiophene-2,5diyl) (P3HT) based diodes. In contrast, for deep states with high density of states, we are able to properly estimate the energetic position, but the low carrier mobility affects the correct determination of the attempt-to-escape frequency as well as the capture cross section. Our results reveal that low carrier mobilities cause inherent obstacles in accurately determining the trap properties and thereby affect the analysis of the origin and nature of the trap states by admittance spectroscopy.

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