Vacancy doping and charge transport in 
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 nanoparticle films for photovoltaic applications

Mock, J. B.; Klingebiel, Benjamin; Schillings, Diana; Nuys, Maurice; Flohre, Jan; Wang, Shuo; Kirchartz, Thomas; Carius, R.

doi:10.1103/physrevmaterials.3.105406

Cited by 2 publications

(7 citation statements)

References 71 publications

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“…The thickness of Bi 2 S 3 thin films was estimated to be around 200, 400, 500, and 400 nm at 350, 400, 450, and 500 °C by profilometry and cross-sectional SEM images (FigureS1). In Figure1b, all Raman spectra of thin films synthesized at 350−500 °C showed distinct peaks at 72, 100, 239, and 261 cm −1 , which were well consistent with the characteristic peaks of Bi 2 S 3 10,34,35. However, additional Raman peaks at 83 and 123 cm −1 were observed for the samples synthesized at 500 °C, indicating the decomposition of Bi 2 S 3 36.…”

supporting

confidence: 72%

“… ,, However, additional Raman peaks at 83 and 123 cm –1 were observed for the samples synthesized at 500 °C, indicating the decomposition of Bi 2 S 3 . The slight shift in the Raman peak might be caused by the change in the film thickness. ,, Figure c shows the XRD patterns of Bi 2 S 3 thin films synthesized at various temperatures. For the Bi 2 S 3 thin films synthesized at 350 °C, nearly no diffraction peaks were observed except the diffraction peaks of In:SnO 2 because of the amorphous state.…”

Section: Results and Discussionmentioning

confidence: 94%

“…In Figure 1b, all Raman spectra of thin films synthesized at 350−500 °C showed distinct peaks at 72, 100, 239, and 261 cm −1 , which were well consistent with the characteristic peaks of Bi 2 S 3. 10,34,35 However, additional Raman peaks at 83 and 123 cm −1 were observed for the samples synthesized at 500 °C, indicating the decomposition of Bi 2 S 3 . 36 The slight shift in the Raman peak might be caused by the change in the film thickness.…”

Section: Resultsmentioning

confidence: 97%

“…36 The slight shift in the Raman peak might be caused by the change in the film thickness. 10,34,35 by the energy-dispersive spectra as shown in Figures S2 and 1d.…”

Section: Resultsmentioning

confidence: 99%

“…However, additional Raman peaks at 83 and 123 cm −1 were observed for the samples synthesized at 500 °C, indicating the decomposition of Bi 2 S 3 36. The slight shift in the Raman peak might be caused by the change in the film thickness 10,34,35. Figure 1c shows the XRD patterns of Bi 2 S 3 thin films synthesized at various temperatures.…”

mentioning

confidence: 97%

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One-Step Rapid Deposition of Bi₂S₃ Thin Film and Comprehensive Study of Its Photoelectrochemical Activity

Chen

Mei

Liu

et al. 2022

Crystal Growth & Design

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Achieving the synthesis of bismuth sulfide (Bi2S3) thin films with high crystallinity and controllable morphology via simple and energy-saving deposition processes is highly desired. A novel, green, and open-air pressure solution-based deposition technique was developed to prepare horizontally orientated Bi2S3 thin films by applying less toxic and commercially available BiCl3 and thiourea as precursors. The deposition time was effectively shortened to the minute level via controlling the mixing mode of the precursors. The crystallinity and surface morphology of Bi2S3 were highly dependent on the synthesis temperatures. Bi2S3 thin films synthesized at a moderate temperature of 450 °C possessed a continuous surface with high crystallinity and exhibited superior photoelectrochemical performance with a high photocurrent density of 2.6 mA/cm2 at 0.6 V vs Ag/AgCl. The promising photoelectrochemical performance can be attributed to the high transfer efficiency of photogenerated electron–hole pairs owing to the small interfacial resistance and long lifetime of photogenerated carriers.

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supporting

confidence: 72%

Section: Results and Discussionmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 97%

“…36 The slight shift in the Raman peak might be caused by the change in the film thickness. 10,34,35 by the energy-dispersive spectra as shown in Figures S2 and 1d.…”

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 97%

See 3 more Smart Citations

One-Step Rapid Deposition of Bi₂S₃ Thin Film and Comprehensive Study of Its Photoelectrochemical Activity

Chen

Mei

Liu

et al. 2022

Crystal Growth & Design

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Realizing High Electrical Conductivity in Chlorine-Doped Bi₂S₃ Thermoelectric Thin Films via Air Plasma Treatment

Hu,

Zhao,

et al. 2023

ACS Materials Lett.

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The demand for a sustainable power supply and management has become increasingly essential with the rise of Internet of Things (IoT) devices and the associated wireless sensor networks. Inorganic thermoelectric thin films, such as those based on Bi 2 S 3 , are becoming a viable solution to this issue as they are low-toxic, inexpensive, and possess a high Seebeck coefficient and low thermal conductivity. However, they usually suffer from an inherent low electrical conductivity. In this study, we tackled this problem by incorporating Cl into Bi 2 S 3 lattices using a solution process, resulting in a substantial increase in both the conductivity and carrier concentration. Additionally, DFT calculations show that the doping of Cl leads to the formation of a degenerate semiconductor, which increases conductivity. Moreover, a high power factor of 121.88 μW m −1 K −2 was achieved after doping before plasma treatment. Specifically, the Bi 2 S 3 sample doped with 0.5 mmol of BiCl 3 with plasma treatment achieved a remarkable conductivity of 100.72 S cm −1 , among the highest reported for a Bi 2 S 3 -based system, which is attributed to the sharp increase of carrier concentration. This research demonstrates a promising approach for overcoming the inherently low conductivity of Bi 2 S 3 -based thermoelectric thin films to enable them as a viable solution for low-cost power supply in IoT applications.

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Vacancy doping and charge transport in Bi2S3 nanoparticle films for photovoltaic applications

Cited by 2 publications

References 71 publications

One-Step Rapid Deposition of Bi₂S₃ Thin Film and Comprehensive Study of Its Photoelectrochemical Activity

One-Step Rapid Deposition of Bi₂S₃ Thin Film and Comprehensive Study of Its Photoelectrochemical Activity

Realizing High Electrical Conductivity in Chlorine-Doped Bi₂S₃ Thermoelectric Thin Films via Air Plasma Treatment

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Vacancy doping and charge transport in Bi2S3 nanoparticle films for photovoltaic applications

Cited by 2 publications

References 71 publications

One-Step Rapid Deposition of Bi2S3 Thin Film and Comprehensive Study of Its Photoelectrochemical Activity

One-Step Rapid Deposition of Bi2S3 Thin Film and Comprehensive Study of Its Photoelectrochemical Activity

Realizing High Electrical Conductivity in Chlorine-Doped Bi2S3 Thermoelectric Thin Films via Air Plasma Treatment

Contact Info

Product

Resources

About

One-Step Rapid Deposition of Bi₂S₃ Thin Film and Comprehensive Study of Its Photoelectrochemical Activity

One-Step Rapid Deposition of Bi₂S₃ Thin Film and Comprehensive Study of Its Photoelectrochemical Activity

Realizing High Electrical Conductivity in Chlorine-Doped Bi₂S₃ Thermoelectric Thin Films via Air Plasma Treatment