Moisture can cause irreversible structural collapse in metal-organic frameworks (MOFs) resulting in decreased internal surface areas and pore volumes. The details of such structural collapse with regard to pore size evolution during degradation are currently unknown due to a lack of suitable in situ probes of porosity. Here we acquire MOF porosity data under dynamic conditions by incorporating a flow-through system in tandem with positronium annihilation lifetime spectroscopy (PALS). From the decrease in porosity, we have observed an induction period for water degradation of some Zn4O-based MOFs that signals much greater stability than commonly believed to be possible. The sigmoidal trend in the degradation curve of unfunctionalized MOFs caused by water vapor has been established from the temporal component of pore size evolution as characterized by in situ PALS. IRMOF-3 is found to degrade at a lower relative humidity than MOF-5, a likely consequence of the amine groups in the structure, although, in contrast to MOF-5, residual porosity remains. The presence of an induction period, which itself depends on previous water exposure of the sample (history dependence), and sigmoidal temporal behavior of the moisture-induced degradation mechanism of MOFs was also verified using powder X-ray diffraction analysis and ex situ gas adsorption measurements. Our work provides insight into porosity evolution under application-relevant conditions as well as identifying chemical and structural characteristics influencing stability.

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Continued reduction in resistance-capacitance (RC) delays in nano-electronic Cu interconnect structures will require new materials with increasingly lower dielectric constants (i.e. low-k). Significant reductions in RC delay can be achieved by reducing the dielectric constant of the relatively high dielectric constant Cu capping/etch stop layer. However, this risks comprising the required barrier performance of this material to the diffusion of Cu, H 2 O, and other species. In this regard, critical thresholds for the diffusion of water and solvents through low-k a-SiO x C y N z :H dielectrics of varying composition were investigated using a combination of X-ray reflectivity mass density and positronium annihilation lifetime spectroscopy pore size metrologies. It was observed that hermetic low-k a-SiO x C y N z :H dielectrics were achieved only at mass densities >2.0 g/cm 3 and when the pore diameter was less than twice the molecular diameter of water. The implications of these critical nano-porosity thresholds on continued scaling of low-k diffusion barrier and ILD materials are discussed as well as methods for overcoming these limitations.

Because of its high electrical resistivity, low dielectric constant (j), high thermal neutron capture cross section, and robust chemical, thermal, and mechanical properties, amorphous hydrogenated boron carbide (a-B x C:H y) has garnered interest as a material for low-j dielectric and solid-state neutron detection applications. Herein, we investigate the relationships between chemical structure (atomic concentration B, C, H, and O), physical/mechanical properties (density, porosity, hardness, and Young's modulus), electronic structure [band gap, Urbach energy (E U), and Tauc parameter (B 1/2)], optical/dielectric properties (frequency-dependent dielectric constant), and electrical transport properties (resistivity and leakage current) through the analysis of a large series of a-B x C:H y thin films grown by plasma-enhanced chemical vapor deposition from ortho-carborane. The resulting films exhibit a wide range of properties including H concentration from 10% to 45%, density from 0.9 to 2.3 g/cm 3 , Young's modulus from 10 to 340 GPa, band gap from 1.7 to 3.8 eV, Urbach energy from 0.1 to 0.7 eV, dielectric constant from 3.1 to 7.6, and electrical resistivity from 10 10 to 10 15 X cm. Hydrogen concentration is found to correlate directly with thin-film density, and both are used to map and explain the other material properties. Hardness and Young's modulus exhibit a direct power law relationship with density above $1.3 g/cm 3 (or below $35% H), below which they plateau, providing evidence for a rigidity percolation threshold. An increase in band gap and decrease in dielectric constant with increasing H concentration are explained by a decrease in network connectivity as well as mass/electron density. An increase in disorder, as measured by the parameters E U and B 1/2 , with increasing H concentration is explained by the release of strain in the network and associated decrease in structural disorder. All of these correlations in a-B x C:H y are found to be very similar to those observed in amorphous hydrogenated silicon (a-Si:H), which suggests parallels between the influence of hydrogenation on their material properties and possible avenues for optimization. Finally, an increase in electrical resistivity with increasing H at <35 at. % H concentration is explained, not by disorder as in a-Si:H, but rather by a lower rate of hopping associated with a lower density of sites, assuming a variable range hopping mechanism interpreted in the framework of percolation theory. V

Activator-free zinc aluminate (ZA) nanophosphor was synthesized through a sol-gel combustion route, which can be used both as a blue-emitting phosphor material and a white-emitting phosphor material, depending on the annealing temperature during synthesis. The material also has the potential to be used in optical thermometry. These fascinating color-tunable emission characteristics can be linked with the various defect centers present inside the matrix and their changes upon thermal annealing. Various defect centers, such as anionic vacancy, cationic vacancy, antisite defect, etc., create different electronic states inside the band gap, which are responsible for the multicolor emission. The color components are isolated from the complex emission spectra using time-resolved emission spectroscopy (TRES) study. Interestingly, the lifetime values of the various defect centers were found to change significantly from milliseconds to microseconds upon thermal annealing, which makes the phosphors more diverse (i.e., either long-persistent blue-emitting phosphors or short-persistent white-emitting phosphors). Fourier transform infrared (FTIR) and diffuse reflectance spectroscopy (DRS) confirmed the presence of antisite defect centers such as Al or Zn in the matrix. X-ray absorption fine structure (EXAFS) study showed that the spinel structure was more disordered in nature for low-temperature-annealed compounds. Electron paramagnetic resonance (EPR) and positron annihilation lifetime spectroscopy (PALS) studies were also carried out in order to characterize various anionic and cationic vacancies and their clusters present in the compounds. Antisite defect centers such as Al or Zn, which act as an electron or hole trap, were found to be responsible for the diverse lifetime behavior. To gain insight about the electronic states inside the band gap, density functional theory (DFT)-based calculations were performed for both pure and various vacancy-introduced spinel structures. Finally, based on the theoretical and experimental results, for the first time, a detailed investigation of various defect-induced emission behavior in ZA is presented, which also explains the mechanism of color tunability and dynamic lifetimes.

Morphological transformation during evaporation-induced self-assembly of a mixed colloidal suspension in micrometric droplets has been investigated. It has been demonstrated that a buckling-driven shape transition of drying droplets of mixed colloidal suspension takes place during evaporation-induced self-assembly. Further, it is also shown that the distortion modulations get significantly amplified with enhancement in volume fraction of anisotropic soft colloidal component of the mixed colloids. It has been argued that the reduction in elastic modulus of formed shell, at the boundary of a drying droplet, and the anisotropic nature of one of the colloidal components facilitate the deformation process. Hierarchical structures of these assembled colloidal grains have been probed using electron microscopy and scattering techniques.

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Positronium (Ps) is shown to exist in a delocalized state in self-assembled metalorganic crystals that have large 1.3-1.5 nm cell sizes. Belonging to a class of materials with record high accessible specific surface areas, these highly porous crystals are the first to allow direct probing with simple annihilation lifetime techniques of the transport properties of long-lived triplet Ps in what is hypothesized to be a Bloch state. Delocalized Ps has unprecedented (high) Ps mobility driven primarily by weak phonon scattering with unusual and profound consequences on how Ps probes the lattice.