Band gap is an important property in designing single-walled carbon nanotube (SWCNT) for nanoelectronic devices. This paper describes the impact of SWCNT band gaps on the performance of a ballistic carbon nanotube field effect transistor (CNTFET) using the 2D numerical simulator. The results demonstrate that with the reduction in SWCNT band gap the performance parameters such as transconductance, output conductance, Ion/Ioff current ratio, gain, and carrier injection velocity enhanced while the short channel effects subthreshold slope and drain-induced barrier lowering get suppressed. The enhanced device performance and reduced short channel effects of CNTFET with the reduction in SWCNT band gaps signifying that the CNTFET is a suitable nanoelectronic device for amplification purposes, low power analog and digital circuits, high-speed and low power applications.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.