Modifying the band gap of an armchair graphene nanoribbon by edge bond relaxation

Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect Transistors

“…These observations follow qualitatively the same trend as predicted by quantum chemistry calculations and observed experimentally, where 9-AGNRs have a much larger band gap than 5-AGNRs (1.40 eV versus 0.1–0.2 eV, respectively). The discrepancy between our observed addition energies is attributed to different electrostatic environments, structural distortion, strain effect, or edge bond relaxation. , …”

“…The discrepancy between our observed addition energies is attributed to different electrostatic environments, 19 structural distortion, 21 strain effect, 22 or edge bond relaxation. 23,24 In Figure 3, we present temperature-dependent transport data recorded on a 9-AGNR device (Device 9). The stability diagram recorded at 10 K (Figure 3a) shows several irregular and nonclosing diamonds with addition energies between 200 and 500 meV.…”

Lattice relaxation effects on the collective resonance spectra of a finite dipole array

“…The lattice relaxation influences the electron structure of crystals; e.g. a theoretical calculation shows lattice relaxation change band gap of graphene nanoribbon, 57 a lattice strain effect introduced by coating can greatly modify the CdTe nanocrystal band gap properties. 58…”

“…The lattice relaxation influences the electron structure of crystals; e.g. a theoretical calculation shows lattice relaxation change band gap of graphene nanoribbon, 57 a lattice strain effect introduced by coating can greatly modify the CdTe nanocrystal band gap properties. 58 It is interesting to discuss the similarity between the finite photonic lattice relaxation here and the lattice relaxation phenomena of nanocrystals, e.g.…”

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors

“…23 Overcoming this limitation by introducing a bandgap in graphene is a complex challenge that remains a current focus of research. 24,25 As an alternative to graphene, black phosphorus (BP) is a van der Waals type semiconducting layered material with a direct band gap from 0.3 eV (bulk) to 2 eV (monolayer) dependent on the number of layers. 20 Notably, BP demonstrates high mobility values of 1000 cm 2 V À1 s À1 and 3900 cm 2 V À1 s À1 at room temperature (RT) 20 and low temperatures, 26 respectively.…”