2D transition metal dichalcogenides are promising in various electronics and optoelectronics applications and have gained popularity owing to their carrier transport and strong light-matter interactions. To fully realize their potential in field-effect transistors (FETs) and photodetectors, high mobility and high responsivity are imperative. Here, we demonstrate the highest mobility of ~166 cm 2 V −1 s −1 at 200 K for single-layer rhenium diselenide (ReSe 2 ) FETs encapsulated between h-BN flakes at V g = 47 V. The high mobility is attributed to low-resistance contacts of scandium/ gold (Sc/Au), with a low Schottky barrier height and reduced charge scattering platform of h-BN. Further, we elucidated the Schottky-barrier-height dependent high photoresponsivity (~3.2 × 10 6 A W −1 ) of few-layer ReSe 2 (FL-ReSe 2 ) at 532 nm-wavelength laser light on an h-BN substrate with Sc/Au contacts. Moreover, broadband light detection of undoped and Co-doped few-layer (FL) ReSe 2 was performed under different laser wavelengths (400-1100 nm). After the deposition of Co nanoparticles, the photocurrent of FL-ReSe 2 increased due to n-doping, as confirmed by the transfer curves of the FL-ReSe 2 -based undoped and co-doped FETs. Further, the work function decreased from 4.856 to 4.791 eV in FL-ReSe 2 , as measured by Kelvin probe force microscopy. No light signal was observed at 1100 nm for the undoped ReSe 2 (1050 nm < λ cut-off < 1100 nm); however, after doping with Co nanoparticles, the cut-off wavelength exceeded to (λ cut-off > 1100 nm), due to the additional trap states generated in the energy band gap of ReSe 2 after Co doping. Further, the transient response of ReSe 2 and Co + ReSe 2 FETs was estimated so that the rise and decay times are decreased from 1.9 s & 2.7 s to 1.1 s & 1.8 s, respectively. ReSe 2 is therefore a promising semiconducting material for electrical and optoelectrical applications.

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As the pattern size of magnetic tunnel junctions (MTJs) becomes smaller, the vortex of magnetization and fluctuations of switching fields caused by the shape MTJ cells will cause serious writing problems. However, a MTJ structure with perpendicular anisotropy (pMTJ) has shown low saturation magnetization and shape independence during the writing process. In this study, we considered Co∕Pd multilayers that allow better tailor-design of magnetization and anisotropy. A series of calculations based on the Landau–Lifschitz–Gilbert equation were carried out on pMTJs to investigate the effect of size variations and material properties on their transfer behaviors. In a same submicrometer cell size, pMTJ shows better properties for high-density magnetoresistive random access memory (MRAM) against synthetic antiferromagnet MTJs. As the number of bilayer Co∕Pd,n, becomes larger, the coercivity and squareness were enhanced because of shape anisotropy and large effective Ku. Even with a small field, 10 Oe, along the hard axis, the drastic decrease, nearly about 80% of switching field, occurs. As a micromagnetic result, a pMTJ with a cell size of 200 nm and n=3 shows an abrupt increase in coercivity and better squareness.