Electrical and mechanical properties of tantalum nitride thin films deposited by reactive sputtering

Kim, Deok Kee; Lee, Heon; Kim, Dong Hwan; Kim, Young Keun

doi:10.1016/j.jcrysgro.2005.06.017

Cited by 38 publications

(13 citation statements)

References 15 publications

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“…The semi-quantitative composition (at.%) obtained by the EDS technique was Ta = 18 ± 0.5, Zr = 13.8 ± 0.3, N = 60 ± 0.1, and O = 8.2 ± 0.3. The measured nanohardness (H) at 5 and 10 mN ( Figure 3) was 18.9 ± 1.48 5 mN and 19.7 ± 1.810 mN Gpa, respectively (the penetration depth at 10 mN was less than 15% of the thickness of the layer); this value is within the range (11 to 31 Gpa) reported in the literature [12,26,[30][31][32][33]. The elastic modulus was 189 GPa using 10 mN and 203 ± 12.9 using 5 mN, somewhat lower than that reported for TaZrN [12,27,30] and TaN [26,[32][33][34][35][36] films, as an effect of the Zr concentration in the TaN film [11,30,31,34].…”

Section: Characterization Of Films (Sem Xrd Raman and Corrosion Stsupporting

confidence: 77%

Tribological, Tribocorrosion and Wear Mechanism Studies of TaZrN Coatings Deposited by Magnetron Sputtering on TiAlV Alloy

et al. 2018

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Different works have demonstrated that tantalum, zirconium, and their nitrides present good biocompatibility. Additionally, TaN and ZrN possess excellent corrosion and wear resistance. Ternary nitrides such as TiAlN have been improved in terms of their mechanical properties with respect to binary systems. Therefore, ternary nitrides as TaZrN have high potential to be used in biomedical applications. This work was focused on studying the tribological and tribocorrosion performance of a TaZrN film. The coating was deposited by DC (Direct Current) magnetron sputtering in a reactive atmosphere using Ta and Zr targets. The tribological characterization was carried out in dry (atmospheric condition) and corrosive environments (synthetic body fluid). The coated surface shows better wear resistance than the uncoated in both conditions. The wear mechanism was studied by FE-SEM (Field Emission-Scanning Electron Microscopy) and Raman confocal microscopy. The wear rate of the coated surfaces was higher in corrosive ambient than in dry conditions. The observed wear mechanism was adhesive–abrasive for lower loads and abrasive at dry conditions for an applied load of 2 N. For corrosive media the principal wear mechanism for 2 N was abrasive–corrosive. For all tests at dry conditions, the formation of a tribolayer of metal oxides, graphite, and amorphous carbon was seen.

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Section: Characterization Of Films (Sem Xrd Raman and Corrosion Stsupporting

confidence: 77%

Tribological, Tribocorrosion and Wear Mechanism Studies of TaZrN Coatings Deposited by Magnetron Sputtering on TiAlV Alloy

et al. 2018

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“…To transfer excited electrons from the BaTaO 2 N phase to the Ta substrate, the conductivity of the intermediate Ta 2 N layer is important, and the conductivity of Ta–N compounds increases with decreasing N/Ta ratio, as the material transitions from semiconducting to semimetallic. Ta 2 N has the lowest N/Ta ratio and its conductivity is remarkably high . Thus, the presence of this compound between the BaTaO 2 N and Ta layers did not obstruct electron transfer.…”

Section: Resultsmentioning

confidence: 96%

Fabrication of BaTaO₂N Thin Films by Interfacial Reactions of BaCO₃/Ta₃N₅ Layers on a Ta Substrate and Resulting High Photoanode Efficiencies During Water Splitting

et al. 2020

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Thin films of barium tantalum oxynitride (BaTaO2N) with thicknesses of 150–680 nm are grown on TaN/Ta substrates via the interfacial reaction of BaCO3/Ta3N5 layers in a N2 atmosphere. A TaN thin film is first deposited on a Ta substrate by the Ar/N2 ion sputtering of a Ta target, and then covered with a TaOx layer by Ar/O2 sputtering. The TaOx layer is subsequently nitrided in an NH3 flow to a Ta3N5 layer. Finally, Ba metal is deposited on the Ta3N5/TaN/Ta substrate under vacuum, oxidized, and carbonized to produce BaCO3. The interfacial reaction between the BaCO3 and Ta3N5 layers is conducted in a N2 atmosphere at high temperatures. X‐ray diffraction patterns confirm BaTaO2N and Ta2N phases on the Ta substrates, while cross‐sectional scanning electron microscopy images show a three‐layer BaTaO2N/Ta2N/Ta structure. Cobalt oxide (CoOx)‐deposited BaTaO2N/Ta2N/Ta photoanodes for water oxidation provide a high photocurrent of 4.6 mA cm−2 at 1.23 V (vs RHE) and an incident photon‐to‐current conversion efficiency of 9% at 600 nm under simulated AM1.5G irradiation. The efficiency of this photoanode is remarkably improved compared with previously reported photoanode thin films. Interestingly, a BaTaO2N/Ta2N/Ta electrode with similar photoanode performance is also obtained via the interfacial reaction between TaN and BaCO3 layers.

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“…An important implication of this result is that new materials originally produced by synthesis under high-P,T conditions may go on to be achieved metastably at low pressure in technologically useful forms such as thin films [35]. Niobium nitrides with N-rich compositions up to Nb 3 N 4 have been produced by pulsed laser deposition of Nb in N 2 /H 2 mixtures [36], Ta 3 N 5 films have been obtained by various PVD methods [37,38] and Ta 4 N 5 has been obtained by reactive sputtering (Table 1) [39].…”

Section: Ambient and Low Pressure Synthesis Approachesmentioning

confidence: 99%

Nitrogen-rich transition metal nitrides

Salamat

Hector

Kroll

et al. 2013

Coordination Chemistry Reviews

124

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The solid state chemistry leading to the synthesis and characterization of metal nitrides with N:M ratios > 1 is summarized. Studies of these compounds represent an emerging area of research. Most transition metal nitrides have much lower nitrogen contents, and they often form with nonor sub-stoichiometric compositions. These materials are typically metallic with often superconducting properties, and they provide highly refractory, high hardness materials with many technological applications. The higher metal nitrides should achieve formal oxidation states (OS) attaining those found among corresponding oxides, and they are expected to have useful semiconducting properties. Only a very few examples of such high OS nitrogen-rich compounds are known at present. The main group elements typically form covalently bonded nitride ceramics such as Si 3 N 4 , Ge 3 N 4 and Sn 3 N 4 , and the early transition metals Zr and Hf produce Zr 3 N 4 and Hf 3 N 4 . However, the only main example of a highly nitrided transition metal compound known to date is Ta 3 N 5 , that has a formal oxidation state +5 and is a semiconductor with visible light absorption leading to applications as a pigment and in photocatalysis. New synthesis routes are being explored to study the possible formation of other N-rich materials that are predicted to exist by ab initio calculations. There is a useful interplay between theoretical predictions and experimental synthesis studies at ambient and high pressure conditions, as we explore and establish the existence and structure-property relations of these new nitride compounds and polymorphs. Here we review the state of current investigations and indicate possible new directions for further work.[a] European Synchrotron Radiation Facility,

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Electrical and mechanical properties of tantalum nitride thin films deposited by reactive sputtering

Cited by 38 publications

References 15 publications

Tribological, Tribocorrosion and Wear Mechanism Studies of TaZrN Coatings Deposited by Magnetron Sputtering on TiAlV Alloy

Tribological, Tribocorrosion and Wear Mechanism Studies of TaZrN Coatings Deposited by Magnetron Sputtering on TiAlV Alloy

Fabrication of BaTaO₂N Thin Films by Interfacial Reactions of BaCO₃/Ta₃N₅ Layers on a Ta Substrate and Resulting High Photoanode Efficiencies During Water Splitting

Nitrogen-rich transition metal nitrides

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Electrical and mechanical properties of tantalum nitride thin films deposited by reactive sputtering

Cited by 38 publications

References 15 publications

Tribological, Tribocorrosion and Wear Mechanism Studies of TaZrN Coatings Deposited by Magnetron Sputtering on TiAlV Alloy

Tribological, Tribocorrosion and Wear Mechanism Studies of TaZrN Coatings Deposited by Magnetron Sputtering on TiAlV Alloy

Fabrication of BaTaO2N Thin Films by Interfacial Reactions of BaCO3/Ta3N5 Layers on a Ta Substrate and Resulting High Photoanode Efficiencies During Water Splitting

Nitrogen-rich transition metal nitrides

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Fabrication of BaTaO₂N Thin Films by Interfacial Reactions of BaCO₃/Ta₃N₅ Layers on a Ta Substrate and Resulting High Photoanode Efficiencies During Water Splitting