Heavy metals such as Pb(II) pollutions in wastewater
have been a serious environmental problem. In this study, we loaded
polyamide–amine (PAMAM) on the surface of magnetic halloysite
nanotubes (MHNTs) via one-step thiol–yne click chemistry to
obtain dendritic magnetic halloysite nanotubes (MHNTs-PAMAM) with
high-density amine groups for the highly efficient adsorption of Pb(II).
The synthesized MHNTs-PAMAM were characterized by field emission scanning
electron microscopy (FE-SEM), transmission electron microscopy (TEM),
X-ray photoelectron spectroscopy (XPS), Fourier transform infrared
(FT-IR) spectroscopy, and thermogravimetric analysis (TGA), which
confirmed the formed nanostructures and chemical features of MHNTs-PAMAM.
And batch adsorption experiments were carried out to investigate the
effect of pH and other variables on the adsorption amount. Here, TGA
shows that PAMAM grafting on halloysite nanotubes (HNTs) achieves
a sufficiently high graft ratio of 6.1 wt %, which ensures sufficient
active adsorption sites on the surface of the composite. With the
increase of the grafted PAMAM generation, the functional group density
and adsorption capacity of the material also gradually increased,
and the maximum adsorption capacity of the material for Pb(II) was
up to 194.4 mg g–1. The adsorption kinetics agrees
well with the pseudo-second-order equations, and the equilibrium data
can be described by the Langmuir isotherm (R
2 = 0.940).
The effect of dV /dt on the IGBT gate circuit in IPM is analyzed both by simulation and experiment. It is shown that a voltage slope applied across the collector-emitter terminals of the IGBT can induce a gate voltage spike through the feedback action of the parasitic capacitances of the IGBT. The dV /dt rate, gate-collector capacitance, gate-emitter capacitance and gate resistance have a direct influence on this voltage spike. The device with a higher dV /dt rate, gate-collector capacitance, gate resistance and lower gate-emitter capacitance is more prone to dV /dt induced self turn-on. By optimizing these parameters, the dV /dt induced voltage spike can be effectively controlled.
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