Vanadium oxide thin films were grown on both quartz and Si(111) substrates utilizing pulsed RF magnetron sputtering technique at room temperature with RF power at 100 W to 700 W. The corresponding thicknesses of the films were increased from 27.5 nm to 243 nm and 21 nm to 211 nm as RF power increased from 100 W to 700 W for quartz and silicon substrates, respectively. X-ray diffraction and field emission scanning electron microscopy were carried out to investigate the phase and surface morphology of the deposited films. Electronic structure and vanadium oxidation states of the deposited films were investigated thoroughly by X-ray photoelectron spectroscopy. As-grown films show stoichiometric vanadium oxide only where vanadium is in V 5+ and V 4+ states. Phase transition of vanadium oxide films were investigated by differential scanning calorimetric technique. The reversible i.e. smart transition was observed in the region from 337 °C to 343 °C. Average hemispherical emittance of the deposited vanadium oxide films was evaluated by an emissometer in the wavelength range of 3 µm to 30 µm. The sheet resistance of the deposited films was measured by two-probe method and data were in the range of 10 6 to 10 5 Ω/square. Optical properties of the films such as solar transmittance, solar reflectance and solar absorptance as well as optical constants e.g. optical band gap were also evaluated. Finally, mechanical properties such as nanohardness and Young's modulus at microstructural length scale were evaluated employing nanoindentation technique with continuous stiffness mode.

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Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V 2 O 5 , V 2 O 3 and VO 2 along with MoO 3 . Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10 −5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.Vanadium oxides based films and coatings are extensively studied due to both thermochromic 14,15,[17][18][19][20]24,25,31 . The Mo and/or molybdenum oxide doped vanadium oxides are reported to be grown by a multitude of techniques such as magnetron sputtering technique 15 , atmospheric pressure chemical vapour deposition 26 , cathodic