The understanding of how spins move and can be manipulated at pico-and femtosecond time scales is the goal of much of modern research in condensed matter physics, with implications for ultrafast and more energy-efficient data processing and storage applications. However, the limited comprehension of the physics behind this phenomenon has hampered the possibility of realising a commercial technology based on it. Recently, it has been suggested that inertial effects should be considered in the full description of the spin dynamics at these ultrafast time scales, but a clear observation of such effects in ferromagnets is still lacking. Here, we report the first direct experimental evidence of intrinsic inertial spin dynamics in ferromagnetic thin films in the form of a nutation of the magnetisation at a frequency of approximately 0.5 THz. This allows us to reveal that the angular momentum relaxation time in ferromagnets is on the order of 10 ps.

We investigate the shielding effectiveness and complex conductivity of single-walled carbon nanotubes (SWNT) distributed in a polyvinyl alcohol (PVA) matrix in the THz frequency range. SWNTs are dispersed in PVA matrices with varying SWNT content (keeping the thickness of SWNT/PVA film constant) using a slow-drying method, and terahertz time-domain spectroscopy (THz-TDS) is performed at room temperature in transmission geometry in the frequency range of 0.3-2.1 THz. The transmittance spectra show a possible application of SWNT/PVA composites as low-bandpass filters in the THz frequency region. Shielding effectiveness of all the samples is measured, and, at a particular probing frequency, they tend to follow a linear relationship with SWNT weight fraction in the polymer matrices. THz conductivity of the composite system is described in the light of a.c. hopping conduction.

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We study THz-driven spin dynamics in thin CoPt films with perpendicular magnetic anisotropy. Femtosecond magneto-optical Kerr effect measurements show that demagnetization amplitude of about 1% can be achieved with a peak THz electric field of 300 kV cm −1 , and a corresponding peak magnetic field of 0.1 T. The effect is more than an order of magnitude larger than observed in samples with easy-plane anisotropy irradiated with the same field strength. We also utilize finite-element simulations to design a meta-material structure that can enhance the THz magnetic field by more than an order of magnitude, over an area of several tens of square micrometers. Magnetic fields exceeding 1 Tesla, generated in such meta-materials with the available laser-based THz sources, are expected to produce full magnetization reversal via ultrafast ballistic precession driven by the THz radiation. Our results demonstrate the possibility of table-top ultrafast magnetization reversal induced by THz radiation.

We report the polarizing behavior of aligned Ni nanoparticles (NPs) having average diameter of 165±15 nm in ~210 μm thick polyvinyl alcohol (PVA) matrix in the frequency range of 0.2-1.6 THz. The NPs have been prepared via a wet chemical route and then aligned in PVA film by using an external magnetic field. When the polarization of THz electric field is parallel to the NPs alignment direction, a strong THz absorption is observed whereas a minimum THz absorption is noticed for the corresponding perpendicular configuration. Degree of polarization is calculated to be 0.9±0.08. Considering the good polarizing performance, ease of preparation, durability, and low maintenance, this aligned NP system is a perfect candidate to emerge as a potential THz polarizer.

The discovery of ultrafast helicity‐independent all‐optical switching (HI‐AOS), as well as picosecond all‐electrical switching of a ferrimagnet, has inspired the ultrafast spintronics community to explore ultrafast switching of a ferromagnet to achieve practical ultrafast storage and memory devices. Two explored mechanisms of HI‐AOS of a ferromagnet in ferromagnet‐ferrimagnet heterostructure are: a) exploiting the indirect exchange coupling with and b) injection of non‐local spin current originated from a switching ferrimagnet. In this manuscript, exchange mediated HI‐AOS of a Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange coupled “[Co/Pt]‐multilayers/Pt spacer/CoGd” heterostructure is demonstrated. The authors have measured layer‐resolved static magnetic properties, single‐shot HI‐AOS, and magnetization dynamics of the ferromagnetic Co/Pt multilayers (MLs), that are ferromagnetically or antiferromagnetically coupled with ferrimagnetic CoGd layers. Time‐resolved magnetization dynamics reveal a 3.5 ps switching time of the Co/Pt MLs, which is the fastest switching of a ferromagnet reported to date. Employing an extended microscopic three‐temperature model, the temporal dynamics of the exchange coupled ferromagnet–ferrimagnet heterostructure are simulated, qualitatively and quantitatively explaining the experimental switching phenomena. This work experimentally as well as theoretically establishes the mechanism of exchange mediated all‐optical switching of ferromagnet‐ferrimagnet heterostructures, which can be integrated with a magnetic tunnel junction for efficient reading after ultrafast energy‐efficient switching.

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We offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ∼3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ∼6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.